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A kind of preparation method and application of silver element doped cztsse thin film

A thin-film, elemental technology, used in semiconductor devices, electrical components, circuits, etc., can solve problems such as narrow pure phase stable region, and achieve the effect of low reaction conditions, reduced selenium drop phenomenon, and low production environment requirements.

Active Publication Date: 2019-07-09
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The pure phase stable region in the phase diagram of the CZTS quaternary system is very narrow, and it is easy to form a binary ternary impurity phase if it deviates from this region. Therefore, it is generally accepted experimentally that the elemental composition of poor copper and rich zinc (Cu / Zn+Sn>0.8; Zn / Sn>1.2) can effectively control the generation of copper-based impurity phases while improving the P-type conductivity of the film, but the formation of impurity phases is difficult to avoid under the condition of non-stoichiometric ratio

Method used

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  • A kind of preparation method and application of silver element doped cztsse thin film
  • A kind of preparation method and application of silver element doped cztsse thin film
  • A kind of preparation method and application of silver element doped cztsse thin film

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Experimental program
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Effect test

Embodiment 1

[0040](1) Add 0.0699g of elemental copper, 0.0494g of zinc, 0.0859g of tin, 0.0857g of sulfur, and 0.0234g of selenium into 5.5mL of a mixed solution of ethylenediamine and ethanedithiol, heat and stir for 1.5h until completely dissolved, add Stabilizer 1mL (a mixed solution of ethanolamine, thioglycolic acid, and ethylene glycol methyl ether) was heated and stirred for 0.5h to form a cola-colored CZTSSe precursor solution;

[0041] (2) The CZTSSe precursor was spin-coated onto a clean flexible substrate using a homogenizer, then annealed on a hot stage at 350 °C for 1 min, and spin-coated 9 times;

[0042] (3) After the spin coating is completed, the sample is selenized in an RTP selenization furnace at 480°C for 20min, the heating rate is 8°C / s, and the temperature is naturally lowered. During the annealing process, the protective gas N is continuously passed. 2 , with a flow rate of 80 sccm, an undoped CZTSSe film with a thickness of about 2 μm can be obtained (as attached ...

Embodiment 2

[0049] (1) Add 0.0678g of elemental copper, 0.0036g of silver, 0.0494g of zinc, 0.0859g of tin, 0.0857g of sulfur, and 0.0234g of selenium to 5.5mL of a mixed solution of ethylenediamine and ethanedithiol, heat and stir for 1.5h to Dissolve completely, add stabilizer 1mL (mixed solution of ethanolamine, thioglycolic acid, ethylene glycol methyl ether) and heat and stir for 0.5h to form a golden yellow CAZTSSe precursor solution;

[0050] (2) The CAZTSSe precursor was spin-coated onto a clean and clean flexible Mo substrate using a homogenizer, and then annealed on a hot stage at 350 °C for 1 min, and the spin coating was repeated 9 times;

[0051] (3) After the spin coating is completed, the sample is selenized in an RTP selenization furnace at 480°C for 20min, the heating rate is 8°C / s, and the temperature is naturally lowered. During the annealing process, the protective gas N is continuously passed. 2 , the flow rate is 80 sccm, and a CAZTSSe film doped with 3% Ag with a th...

Embodiment 3

[0058] (1) Add 0.0671g of elemental copper, 0.0047g of silver, 0.0494g of zinc, 0.0859g of tin, 0.0857g of sulfur, and 0.0234g of selenium into 5.5mL of a mixed solution of ethylenediamine and ethanedithiol, heat and stir for 1.5h to Dissolve completely, add stabilizer 1mL (mixed solution of ethanolamine, thioglycolic acid, ethylene glycol methyl ether) and heat and stir for 0.5h to form a golden yellow CAZTSSe precursor solution;

[0059] (2) The CAZTSSe precursor was spin-coated onto a clean and clean flexible Mo substrate using a homogenizer, and then annealed on a hot stage at 350 °C for 1 min, and the spin coating was repeated 9 times;

[0060] (3) After the spin coating is completed, the sample is selenized in an RTP selenization furnace at 480°C for 20min, the heating rate is 8°C / s, and the temperature is naturally lowered. During the annealing process, the protective gas N is continuously passed. 2 , with a flow rate of 80 sccm, a CAZTSSe film doped with 4% Ag with a t...

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Abstract

The invention discloses a preparation method of an elemental silver-doped CZTSSe thin film and application of the elemental silver-doped CZTSSe thin film in a flexible solar cell. The quality of the thin film can be improved by Ag doping, the open-circuit voltage, the filling factor, the photoelectric conversion efficiency and a band-tail state phenomenon of the device are effectively improved, the repeatability and the stability of an experiment are relatively good, and the thin film has relatively good application value in an aspect of the solar cell.

Description

technical field [0001] The invention relates to a method for preparing a CZTSSe thin film doped with silver single substance and its application in flexible solar cells, belonging to the technical field of thin film solar cells. Background technique [0002] Benefited from cost and technical advantages, CdTe, Cu(In,Ga)Se 2 (CIGS) represented by the compound thin film battery has maintained a strong momentum of development in recent years. However, mainstream thin-film solar cells such as CIGS and CdTe are limited by factors such as scarcity of raw materials (In, Ga) and toxic constituent elements (Cd) in the future TW scale production. Compared with the above material systems, Cu 2 ZnSn(SSe) 4 (CZTSSe), the band gap is continuously adjustable in the range of 1.0-1.5eV, and its theoretical conversion efficiency can reach more than 31%. At the same time, CZTSSe has an absorption coefficient as high as 104cm-1 in the visible light range, making it an ideal light-absorbing l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/072
CPCY02E10/50
Inventor 程树英余雪严琼武四新田庆文贾宏杰
Owner FUZHOU UNIV
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