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A kind of preparation method and application of cztsse film doped with indium simple substance

A thin-film, single-substance technology, applied in the field of thin-film solar cells, can solve problems such as large phase differences, and achieve the effects of simple preparation process, good repeatability and stability, and low requirements for reaction conditions

Active Publication Date: 2019-12-31
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Obviously, the open circuit voltage loss and fill factor loss of this type of battery are quite different from the theoretical values, and there is still a lot of room for improvement. Therefore, reducing the open circuit voltage loss (Voc-deficit) and fill factor loss (FF-deficit) is the key to improving The key to C ZTS system solar cells

Method used

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  • A kind of preparation method and application of cztsse film doped with indium simple substance
  • A kind of preparation method and application of cztsse film doped with indium simple substance
  • A kind of preparation method and application of cztsse film doped with indium simple substance

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] (1) Add 0.0699g of elemental copper, 0.0494g of zinc, 0.0859g of tin, 0.0857g of sulfur, and 0.0234g of selenium into 5.5mL of a mixed solution of ethylenediamine and ethanedithiol (10:1, v / v), Heat and stir for 1.5h until completely dissolved, add 1mL of stabilizer composed of ethanolamine, thioglycolic acid, ethylene glycol methyl ether (1:1:2, v / v), heat and stir for 0.5h to form a brown-golden CZTSSe precursor solution ;

[0037] (2) Spin-coat the CZTSSe precursor solution onto a clean and clean flexible Mo substrate using a homogenizer, and then anneal on a hot stage at 350 °C for 1 min; repeat the operation 9 times to form a CZTSSe prefabricated layer;

[0038] (3) Continuously feeding protective gas N 2 (The flow rate is 80sccm), the spin-coated sample is placed in an RTP selenization furnace at 550°C for 900s, the heating rate is 8°C / s, and the temperature is naturally lowered to obtain an undoped sample with a thickness of about 2 μm. CZTSSe film.

Embodiment 2

[0040] (1) Add 0.0699g of elemental copper, 0.0025g of indium, 0.0494g of zinc, 0.0833g of tin, 0.0857g of sulfur, and 0.0234g of selenium to 5.5mL of a mixed solution of ethylenediamine and ethanedithiol (10:1, v / In v), heat and stir for 1.5h until completely dissolved, add 1mL of stabilizer composed of ethanolamine, thioglycolic acid, ethylene glycol methyl ether (1:1:2, v / v), heat and stir for 0.5h, and form a golden yellow CZTISSe precursor solution;

[0041] (2) Spin-coat the CZTISSe precursor solution onto a clean and clean flexible Mo substrate using a homogenizer, and then anneal on a hot stage at 350 °C for 1 min; repeat the operation 9 times to form a CZTISSe prefabricated layer;

[0042] (3) Continuously feeding protective gas N 2 (The flow rate is 80sccm), the spin-coated sample is placed in an RTP selenization furnace at 550°C for 900s, the heating rate is 8°C / s, and the temperature is naturally lowered to obtain a doped 3 with a thickness of about 2 μm. %In CZ...

Embodiment 3

[0044] (1) Add 0.0699g of elemental copper, 0.0050g of indium, 0.0494g of zinc, 0.0807g of tin, 0.0857g of sulfur, and 0.0234g of selenium to 5.5mL of a mixed solution of ethylenediamine and ethanedithiol (10:1, v / In v), heat and stir for 1.5h until completely dissolved, add 1mL of stabilizer composed of ethanolamine, thioglycolic acid, ethylene glycol methyl ether (1:1:2, v / v), heat and stir for 0.5h, and form a golden yellow CZTISSe precursor solution;

[0045] (2) Spin-coat the CZTISSe precursor solution onto a clean and clean flexible Mo substrate using a homogenizer, and then anneal on a hot stage at 350 °C for 1 min; repeat the operation 9 times to form a CZTISSe prefabricated layer;

[0046] (3) Continuously feeding protective gas N 2 (The flow rate is 80 sccm), the spin-coated sample is placed in an RTP selenization furnace at 550 °C for 900 s, the heating rate is 8 °C / s, and the temperature is naturally lowered to obtain a doped 6 with a thickness of about 2 μm. %I...

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PUM

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Abstract

The invention discloses a preparation method of an indium doped CZTSSe film and an application of the same in a flexible solar battery. According to the preparation method provided by the invention, the In is doped in the CZTSSe film to replace the part of Sn atoms, so that the phase defect of the film body is improved, the carrier concentration is improved, the prepared solar battery is significantly improved in short circuit current density, open-circuit voltage, filling factor and photoelectric conversion efficiency, and thus the solar battery has relative good application value.

Description

technical field [0001] The invention relates to a preparation method of a CZTSSe thin film doped with indium simple substance and its application in flexible solar cells, belonging to the technical field of thin film solar cells. Background technique [0002] Cu 2 ZnSn(SSe) 4 The bandgap of (CZTSSe) is continuously adjustable in the range of 1.0-1.5eV, and its theoretical conversion efficiency can reach more than 31%. Meanwhile, CZTSSe exhibits up to 10 4 cm -1 The absorption coefficient is an ideal light-absorbing layer material. However, the pure phase stable region in the phase diagram of the CZTS quaternary system is very narrow, and it is easy to form a binary ternary impurity phase if it deviates from this region. Therefore, it is generally accepted experimentally that the elemental composition of poor copper and rich zinc (Cu / Zn+Sn>0.8; Zn / Sn>1.2), can effectively control the generation of copper-based impurity phases while improving the P-type conductivity...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/0392H01L31/0725H01L21/02H01L31/18
CPCH01L21/02425H01L21/02568H01L21/02584H01L21/02628H01L31/0327H01L31/03926H01L31/0725H01L31/18Y02E10/50Y02P70/50
Inventor 程树英余雪赖云锋武四新严琼周海芳
Owner FUZHOU UNIV
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