Method of operating a ferroelectric memory cell and related ferroelectric memory cell
A technology of ferroelectric memory and ferroelectric capacitor, applied in static memory, digital memory information, capacitors, etc., can solve problems such as shortening the service life of FeRAM cells, increasing operating costs, and increasing FeRAM cell power consumption.
Active Publication Date: 2019-12-13
MICRON TECH INC
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Therefore, exposing ferroelectric materials to higher voltages increases the power consumption of the FeRAM cell, increases operating costs, and also shortens the lifetime of the FeRAM cell
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[0022] The illustrations contained herein are not intended to be actual views of any particular system or semiconductor device, but are merely idealized representations used to describe the embodiments herein. The common elements and features between the drawings can keep the same element symbol designation.
[0023] The following description provides specific details such as material types, material thicknesses, and processing conditions to provide a thorough description of the embodiments described herein. However, it will be understood by one of ordinary skill in the art that the embodiments disclosed herein may be practiced without employing such specific details. Rather, the embodiments may be practiced in conjunction with conventional fabrication techniques used in the semiconductor industry. Additionally, the description provided herein does not form a complete process flow for fabricating a ferroelectric memory cell, and the ferroelectric memory cell to be described b...
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The present invention discloses a method of operating a ferroelectric memory cell. The method includes applying one of a positive bias voltage and a negative bias voltage to a ferroelectric memory cell including a capacitor including an upper electrode, a lower electrode, a space between the upper electrode and the lower electrode a ferroelectric material, and an interface material between the ferroelectric material and one of the upper electrode and the lower electrode. The method further includes applying the other of the positive bias voltage and the negative bias voltage to the ferroelectric memory cell to switch polarization of the ferroelectric memory cell, wherein the negative bias The absolute value of the set voltage is different from the absolute value of the positive bias voltage. The present invention also describes ferroelectric memory cells.
Description
[0001] priority claim [0002] This application asserts U.S. Serial No. 14 / 842,124, filed September 1, 2015, entitled "METHODS OF OPERATING FERROELECTRIC MEMORY CELLS, AND RELATEDFERROELECTRIC MEMORY CELLS" The right to the filing date of the patent application. technical field [0003] Embodiments disclosed herein relate to methods of operating ferroelectric memory cells comprising ferroelectric materials exhibiting asymmetric ferroelectric properties, and such ferroelectric memory cells. Background technique [0004] Ferroelectric random access memory (FeRAM) cells have been considered for use in many memory arrays. FeRAM cells contain ferroelectric materials that have a polarization that can be switched in response to an applied electric field (eg, a bias voltage). The polarization state of the ferroelectric material in the FeRAM cell can be used to determine the logic state (eg, 1 or 0) of the FeRAM cell. The polarization of the ferroelectric material can be maintain...
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IPC IPC(8): G11C11/22H01L27/11507H01L49/02H10N97/00
CPCG11C11/2275G11C11/2297H01L28/56G11C11/221H01L28/55H01L28/65H01L28/75H10B53/30G11C11/22H10B53/00G11C14/00G11C11/5657G11C13/047G11C11/2273G11C11/225
Inventor S·C·尼科勒斯A·A·恰范M·N·洛克莱
Owner MICRON TECH INC