Unlock instant, AI-driven research and patent intelligence for your innovation.

A storage unit and its storage array structure and operation method

A storage cell array and storage cell technology, applied in information storage, static memory, read-only memory, etc., can solve the problem of large layout area of ​​storage cells

Active Publication Date: 2020-07-17
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Since in the prior art, a large programming current (6mA-10mA) needs to be provided when programming the EFUSE memory cell circuit structure, the EFUSE fuse structure will be blown, which requires a relatively large programming drive tube (NMOS tube) NM1), thus resulting in the disadvantage of a large memory cell layout area

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A storage unit and its storage array structure and operation method
  • A storage unit and its storage array structure and operation method
  • A storage unit and its storage array structure and operation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The implementation of the present invention is described below through specific examples and in conjunction with the accompanying drawings, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific examples, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0036] FIG. 4(a) is a conceptual diagram of the memory cell structure of the present invention, and FIG. 4(b) is a circuit diagram of the memory cell circuit of the present invention. As shown in Fig. 4 (a) and Fig. 4 (b), the memory cell of the present invention is a kind of NMOS type program selection diode EFUSE memory cell, and it is equivalent to a diode and EFUSE fuse resistance th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a memory unit, a memory array structure thereof, and an operation method, wherein the memory unit is a type of NMOS-type programming selection diode fusing resistance memory unit and is equivalent to a diode and a fuse wire resistor used for programming. The invention solves a problem of large area of a layout of an EFUSE memory unit in the prior art.

Description

technical field [0001] The invention relates to a storage unit and its storage array structure and operation method, in particular to an EFUSE storage unit and its storage array structure and operation method. Background technique [0002] figure 1 It is a circuit structure diagram of an EFUSE storage unit in the prior art. The circuit structure is composed of an EFUSE fuse resistor R1 and a programming drive NMOS transistor NM1 with a large channel width. In terms of programming action, when the EFUSE fuse performs the programming action, the anode (Anode) terminal of the EFUSE fuse resistor R1 applies the programming voltage VFS, and then when the word line WL corresponding to the row address is at a high level, one of the rows is selected to open the EFUSE programming Drive the NMOS transistor NM1, change the physical structure of the EFUSE fuse resistor R1 through thermal rupture or electromigration (EM), from the low impedance state before being programmed to a high i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C17/16G11C17/18
CPCG11C17/16G11C17/18
Inventor 任永旭顾明
Owner SHANGHAI HUALI MICROELECTRONICS CORP