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CDSEM scanning method for pattern in wafer layout

A scanning method and layout technology, applied in the semiconductor field

Inactive Publication Date: 2018-05-01
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Conventional critical dimension scanning electron microscopy (CDSEM) is limited to the X and Y directions, and AFM or OCD is used to detect the characteristics of the third direction (Z direction) of the pattern, and scanning in the Z direction can also provide more details of the pattern , but the current critical dimension scanning electron microscope (CDSEM) cannot scan in the Z direction

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  • CDSEM scanning method for pattern in wafer layout
  • CDSEM scanning method for pattern in wafer layout
  • CDSEM scanning method for pattern in wafer layout

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Embodiment 1

[0047] The CDSEM scanning method of the pattern in the wafer layout of the present invention is described in detail below with reference to the accompanying drawings, figure 1 A process flow diagram showing a CDSEM scanning method for a pattern in a wafer layout according to the present invention; figure 2 A schematic diagram showing the CDSEM scanning process of the pattern in the wafer layout of the present invention; image 3 A schematic diagram showing a CDSEM scanning process of a pattern in a wafer layout according to the present invention.

[0048] The invention provides a CDSEM scanning method for patterns in a wafer layout, such as figure 1 As shown, the main steps of the method include:

[0049] Step S1: scanning the electron beam in the CDSEM perpendicular to the wafer layout to obtain the horizontal topography of the pattern in the wafer layout;

[0050] Step S2: scanning the electron beam in the CDSEM obliquely to the wafer layout to obtain the side profile of...

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Abstract

The invention relates to a CDSEM scanning method for a pattern in a wafer layout. The method comprises steps: an electron beam in the CDSEM is vertical to the wafer layout for scanning to obtain the horizontal morphology of the pattern in the wafer layout; the electron beam in the CDSEM is inclined to the wafer layout for scanning to obtain the side morphology of the pattern in the wafer layout; and according to the obtained horizontal morphology and the side morphology, features of the pattern in the wafer layout are analyzed and detected. According to the scanning method in the invention, the horizontal morphology of the pattern can be obtained, the inclined electron beam can scan the side wall to obtain the side wall morphology of the pattern, features in a Z direction are obtained, thefeatures provided in the Z direction are more detailed, the pattern can be monitored better, and the yield of the device is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a CDSEM scanning method for patterns in a wafer layout. Background technique [0002] Critical Dimension Scanning Electron Microscope (CDSEM) is an instrument used to measure the critical dimension (CD) of patterns on wafers in semiconductor manufacturing. Through the aperture (aperture) to reach the pattern of the measurement object, use the detector to capture the released secondary electrons and convert them into electrical signals to obtain a two-dimensional image, and measure the measurement object with high precision based on the two-dimensional image information critical size. [0003] Conventional critical dimension scanning electron microscopy (CDSEM) is limited to the X and Y directions, and AFM or OCD is used to detect the characteristics of the third direction (Z direction) of the pattern, and scanning in the Z direction can also provide more details of the pa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
Inventor 柏耸
Owner SEMICON MFG INT (SHANGHAI) CORP
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