Method for removing residual defects after photoresist development

Abstract

The invention discloses a method for removing residual defect after photoresist developing. The method comprises the following steps: step one, forming photoresist on a wafer and carrying out exposureand developing to form a photoresist graph, and carrying out pre-defining on the size of the photoresist graph by exposure; step two, carrying out photoresist pre-treatment process to completely remove photoresist residue existing in a developed region. Meanwhile, by the photoresist pretreatment process, the size of the photoresist graph is reduced, and through the pre-defined size and the reduced size, the final size of the photoresist graph reaches the target size. By the method, residue after photoresist developing can be removed, and thus, dielectric layer residue after follow-up dielectric layer etching is eliminated.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for removing residual defects after photoresist development. Background technique [0002] In the device production process, a photolithographic development process is often used. After the photolithographic development, wet etching is used to remove the dielectric layer in the developed area. However, the development capability of photolithography in a large area is insufficient, that is, when the area of ​​the development area is large, a small amount of photoresist residue will appear. When the dielectric layer is removed by wet etching under the condition of photoresist residue, due to the photoresist residue on the dielectric layer in the area to be etched, sufficient contact between the solution and the dielectric layer cannot be achieved, which will eventually lead to Residual defects in the dielectric layer. Such as figure 1 As s...

AI Technical Summary

Problems solved by technology

However, the development ability of photolithography in large areas is insufficient, that is, when the development area is large, a small amount of photoresist residue will appear

When the dielectric layer is removed by wet etching under the condition of photoresist residue, due to the photoresist residue on the dielectric layer in the area to be etched, sufficient contact between the solution and the dielectric layer cannot be achieved, which will eventually lead to Residual defects in the dielectric layer

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