CIGS thin film preparation method by using supercritical fluid for low-temperature selenizing

Abstract

The invention belongs to the field of photoelectric materials and provides a CIGS thin film preparation method by using supercritical fluid for low-temperature selenizing. The method includes: firstly, preparing forbidden-band-adjustable CIGS nanocrystals by a particle method, then preparing a film-coated substrate in gradient distribution by a dip-coating method, and finally, using the supercritical fluid for selenizing the film-coated substrate at a low temperature of 100-400 DEG C so as to obtain a continuous CIGS thin film. The CIGS thin film preparation method has the advantages that a process of using the supercritical fluid for low-temperature selenizing to prepare the CIGS nanocrystal thin film can be conducted at the lower temperature of 100-400 DEG C, thus, film coating performed on the flexible substrate with low bearing temperature is benefited, using high-toxic H2Se is avoided during selenizing by the supercritical fluid, and good selenizing effects can be gained and crystal boundaries can be better eliminated.

Description

technical field [0001] The invention belongs to the field of new energy sources of photoelectric materials, and in particular relates to a method for preparing CIGS thin films by low-temperature selenization of supercritical fluids. Background technique [0002] At present, due to the impact of the global energy crisis, solar energy has become a hot spot for alternative energy. Copper indium sulfide (CIS) thin-film solar cells (including copper indium sulfide, copper gallium selenide, copper gallium sulfide, copper indium gallium selenide (hereinafter referred to as CIGS), copper indium gallium sulfide and copper indium gallium sulfide selenide, etc.) The optoelectronic properties and structural stability of the material are recognized as one of the most promising third-generation photovoltaic materials. Although the current highest efficiency of CIGS thin-film solar cells is 20.3% created by the traditional vacuum process, the traditional vacuum method cannot overcome high...

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Problems solved by technology

The problem with this method is that the surfactant on the CIGS nanocrystalline particles is not easy to remove in the traditional selenization atmosphere, and carbon residues are easy to remain between the grain boundaries, which makes it difficult to form larger CIGS particles and form continuous particles. CIGS Thin Film

[0008] At present, CIGS / CIS / CGS / CIGSS thin films usually undergo selenization annealing treatment, and the conversion efficiency of thin films without selenization annealing treatment is often poor

The traditional selenization annealing treatment has a high selenization temperature (400~550°C), and the selenium source can be roughly divided into two types: one is the selenization of elemental Se powder and Se vapor; the other is the use of H 2 Se selenization, Se vapor toxicity is small, but the effect is poor; and H 2 Although Se selenization effect is good, but H 2 Se is highly toxic, flammable and explosive

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