Thin film transistor and manufacturing method thereof, and film layer etching process

Abstract

Disclosed are a thin film transistor and a manufacturing method thereof, and a film layer etching process. The film layer etching process is used for performing etching on a film layer of the thin film transistor; photoresist is formed on the first surface of the film layer; the photoresist comprises reserved photoresist with a preset pattern and residual photoresist; the film layer etching process comprises the following steps of performing pretreatment on the film layer by adopting a O<2>-containing gas to remove the residual photoresist, wherein pretreatment is performed for preset duration; and performing etching treatment on the film layer by adopting first etching gas. According to the film layer etching process, pretreatment is performed on the film layer by adopting the O<2>-containing gas firstly, wherein the O<2> gas is subjected to radio frequency discharge to form oxygen ion active ingredients of a certain concentration; and the oxygen ion active ingredients are reacted with the photoresist to remove the residual photoresist and to enable the photoresist appearance to be recovered to the normal state, so that influence to the quality of the thin film transistor caused by abnormal film layer appearance due to the fact that the part, which needs to be etched, of the film layer is shielded by the photoresist can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a thin film transistor, a manufacturing method of the thin film transistor and a film etching process. Background technique [0002] In the manufacturing process of the thin film transistor, the film layer is processed by photolithography process, so as to form the film layer into a preset pattern. In the specific photolithography process, the photoresist is processed to form a preset pattern after the exposure and development process, and then the film layer is etched to form the preset pattern by using the mask function of the photoresist , in order to realize the transfer of the preset pattern of the photoresist to the preset pattern of the film layer. [0003] In the manufacturing process of thin film transistors, the angle of the sidewall after etching at any position of the film layer and the uniformity of the critical dimension spacing directly affect the qu...

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Problems solved by technology

[0004] However, due to the photolithography process, it is difficult to ensure the consistency of the photoresist morphology at each position of the substrate, so the photoresist morphology is prone to abnormalities.

The appearance of the photoresist is abnormal, resulting in a certain part of the photoresist remaining, which increases the coverage of the photoresist, and will cause the film layer to be etched to be blocked by the photoresist, so that the photoresist is The morphology of the film layer etched as a mask is also abnormal, which affects the quality of the thin film transistor

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