Thin film transistor, manufacturing method of thin film transistor and film etching process

Abstract

A thin film transistor, a manufacturing method of the thin film transistor and a film etching process, wherein the film etching process is used to etch the film layer of the thin film transistor, a photoresist is formed on the first surface of the film layer, and the photoresist The resist includes reserved photoresist and residual photoresist with a preset pattern. The film etching process includes the following steps: pretreat the film layer with O2-containing gas to remove the residual photoresist, wherein the pretreatment lasts Preset duration; using the first etching gas to etch the film layer. In the above film etching process, the film layer is pretreated with O2 gas. The O2 gas in it is discharged by radio frequency to form a certain concentration of oxygen ion active molecules, and the oxygen ion active molecules react with the photoresist to remove residual light. Resist, to restore the morphology of the photoresist to normal, to avoid the part of the film layer that needs to be etched from being blocked by the photoresist, resulting in abnormal morphology of the film layer, thereby affecting the quality of the thin film transistor.

Description

Technical field [0001] The present invention relates to the field of semiconductor device, and more particularly to a method of fabricating a thin film transistor and a thin film transistor and a membrane layer etching process. Background technique [0002] During the fabrication process of the thin film transistor, the film layer is treated with a photolithography process to form a preset pattern. In the specific photolithography process, by treating the photoresist to form a predetermined pattern after the exposure and development process, the film layer is etched to form the preset pattern by etching the mask of the photoresist. To achieve a pattern transfer of the preset pattern of the photoresist to the preset pattern of the film layer. [0003] During the production process of the thin film transistor, the angle of the film layer in the etch side wall of any position and the homogeneity of the key size spacing directly affect the quality of the quality of the thin film tran...

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Problems solved by technology

[0004] However, due to the photolithography process, it is difficult to ensure the consistency of the photoresist morphology at each position of the substrate, so the photoresist morphology is prone to abnormalities.

The appearance of the photoresist is abnormal, resulting in a certain part of the photoresist remaining, which increases the coverage of the photoresist, and will cause the film layer to be etched to be blocked by the photoresist, so that the photoresist is The morphology of the film layer etched as a mask is also abnormal, which affects the quality of the thin film transistor

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