Methods for depositing conformal BCN films

Abstract

Methods for forming a borocarbide film on a substrate surface by exposing the substrate surface to a borane precursor. The borocarbide film optionally comprising nitrogen and / or hydrogen. The borocarbide film can be deposited onto a surface that comprises substantially no boron. The borane precursor can include compound having the general formula NHR2BH3, where each R is independently selected from the group consisting of hydrogen, C1-C10 alkyl groups, C1-C10 alkenyl groups and aryl groups.

Description

technical field [0001] Embodiments of the present disclosure generally relate to methods of forming boron carbide films. More specifically, embodiments of the present disclosure relate to methods of forming boron carbide films, boron carbonitride films, and / or boron nitride films. Background technique [0002] Due to strong covalent bonds, the elements boron, carbon, and nitrogen form B-C-N materials with many useful properties. For example, the material may be formed to have high hardness, high temperature stability, enhanced reactive ion etching (RIE) selectivity, and / or enhanced solvent etchant resistance. Efforts have focused on diamond-like carbon (DLC) films, boron carbide films, and boron nitride films. Research has also focused on ternary compounds such as BCN. [0003] Conventional processes use high temperature chemical vapor deposition (CVD) at temperatures greater than about 550° C. or use plasma enhanced CVD. However, high temperature limits the application ...

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Problems solved by technology

However, high temperature limits the application of such films, and plasma treatment reduces the conformality of the film due to the distribution of the plasma

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