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GaN material-based LED chip with vertical structure and LED lamp

A LED chip and vertical structure technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of difficult packaging, light reduction, poor reliability, etc., and achieve the effects of LED cost reduction, integration improvement, and flexible color temperature adjustment

Inactive Publication Date: 2018-05-18
XIAN ZHISHENG RUIXIN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, a single light-emitting chip can only emit monochromatic light. If light of other colors needs to be synthesized, light-emitting chips of different colors need to be mixed together and filled with a large amount of phosphor powder. difficult problem
In addition, when light is incident into the phosphor layer, there will be strong scattering, which will cause the phosphor layer to absorb light, causing a large amount of light to be reflected, that is, the light transmitted through the phosphor layer will be significantly reduced.

Method used

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  • GaN material-based LED chip with vertical structure and LED lamp
  • GaN material-based LED chip with vertical structure and LED lamp
  • GaN material-based LED chip with vertical structure and LED lamp

Examples

Experimental program
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Effect test

Embodiment 1

[0035] See figure 1 , figure 1 A schematic structural diagram of a GaN material-based vertical structure LED chip provided by the present invention, the chip includes:

[0036] blue light emitting component, red light emitting component, common positive electrode component, blue light emitting component negative electrode and red light emitting component negative electrode, wherein,

[0037] The common positive electrode component is disposed on the blue light emitting component and the red light emitting component, and the negative electrode of the blue light emitting component and the negative electrode of the red light emitting component are respectively disposed on the blue light emitting component and the red light emitting component. On the light emitting component, wherein the blue light emitting component includes GaN material.

[0038] See figure 2 , figure 2 Another kind of GaN material-based vertical structure LED chip structure diagram provided by the present...

Embodiment 2

[0053] The present invention also provides a method for preparing a GaN material-based vertical structure LED light source, the method comprising:

[0054] Select sapphire as substrate (11);

[0055] preparing a blue light emitting component on the substrate (11), wherein the blue light emitting component includes a GaN material;

[0056] Selectively etching the blue light emitting component to form a red light wick groove;

[0057] preparing a red light emitting component in the red light wick groove;

[0058] Prepare a reflective metal layer and a common anode on the surface of the blue light emitting component and the red light emitting component;

[0059] The substrate (11) is thinned and a blue cathode and a red cathode are respectively prepared on the blue light-emitting component and the red light-emitting component, so as to complete the preparation of a GaN-based vertical structure LED light source.

[0060] See Figure 4 , Figure 4 It is a schematic structural di...

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PUM

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Abstract

The invention provides a GaN material-based LED chip with a vertical structure. The GaN material-based LED chip comprises a blue light emitting assembly, a red light emitting assembly, a common positive electrode assembly, a blue light emitting component negative electrode and a red light emitting component negative electrode, wherein the common positive electrode assembly is arranged on the bluelight emitting assembly and the red light emitting assembly, the blue light emitting assembly negative electrode and the red light emitting assembly negative electrode are arranged on the blue light emitting assembly and the red light emitting assembly respectively, and the blue light emitting assembly comprises GaN material. The method has the beneficial effects that light with multiple colors can be generated on a single chip, and the use amount of fluorescent powder is less; the integration level is improved, and the cost of the LED can be reduced; and the color temperature adjustment is more flexible.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a GaN material-based vertical structure LED chip and an LED lamp. Background technique [0002] LED light sources are more and more commonly used in the field of lighting. Usually, the LED light source emits various colors of light through the LED light-emitting chip and phosphor powder. In the prior art, a single light-emitting chip can only emit monochromatic light. To synthesize light of other colors, it is necessary to mix light-emitting chips of different colors together and fill a large amount of phosphor powder. Difficult question. In addition, strong scattering occurs when light is incident on the phosphor layer, which makes the phosphor layer absorb light, causing a large amount of light to be reflected, that is, the light transmitted through the phosphor layer will be significantly reduced. Therefore, how to design a new type of LED chip becomes extremely impo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/32H01L33/50H01L33/64H01L33/48
CPCH01L33/64H01L33/32H01L33/48H01L33/502
Inventor 左瑜
Owner XIAN ZHISHENG RUIXIN SEMICON TECH CO LTD
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