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Semiconductor power device sub module and production method thereof and crimping-type IGBT module

A technology of power devices and production methods, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as poor heat transfer performance, achieve strong thermal conductivity, and ensure the effect of heat transfer capabilities

Inactive Publication Date: 2018-05-22
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, the technical problem to be solved by the present invention is to overcome the defect of poor heat transfer performance of the pressure-connected IGBT module in the prior art

Method used

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  • Semiconductor power device sub module and production method thereof and crimping-type IGBT module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The present embodiment provides a kind of production method of semiconductor power device sub-module, comprises the steps: S1. on the silver-plated surface 11 of molybdenum sheet 1, deposits AgSn film solder paste, and silver-plated surface 11 is arranged near described chip 2; S2 . Mount the chip 2 on the surface of the AgSn thin film solder paste through a fixture to form a structure to be sintered.

[0037] In the prior art, the heat transfer efficiency between the various modules of the IGBT is low, resulting in poor overall heat dissipation performance, which easily affects the stability of use.

[0038] In the production method of the semiconductor power device sub-module provided in this embodiment, AgSn is first deposited on the molybdenum sheet 1, and AgSn has a strong thermal conductivity, which can ensure the heat transfer capability of the entire sub-module.

[0039] In this embodiment, in the step S1, the AgSn thin film solder paste is deposited on the moly...

Embodiment 2

[0051] This embodiment provides a semiconductor power device sub-module, using the production method of the semiconductor power device sub-module recorded in Embodiment 1, the semiconductor power device sub-module includes: a molybdenum sheet 1; a chip 2, and the The opposite side of the molybdenum sheet 1 is provided with a first electrode and is provided with AgSn film solder paste, and the side of the chip 2 different from the AgSn film solder paste is provided with a second electrode; The two electrodes are bonded together; and an insulating frame 4 is used to accommodate the molybdenum sheet 1 , the chip 2 and the lower pad 3 .

[0052] The semiconductor power device sub-module further includes: a third electrode arranged on the chip 2 at one side of the second electrode; a gate probe 5 arranged vertically with the chip 2 and connected at one end to the The third electrodes are in contact. The chip 2 is provided with a corner, and the gate probe 5 is embedded in the corn...

Embodiment 3

[0059] This embodiment provides a crimping type IGBT module, comprising: the semiconductor power device sub-module described in Embodiment 2; A gate terminal to which one end of the gate probe 5 is connected; a collector disposed on a side of the molybdenum sheet 1 close to the semiconductor power device sub-module.

[0060] Specifically, the gate probe 5 is in contact with the gate terminal to ensure electrical conduction between the two. At this time, the other end of the gate terminal is in contact with the collector. Since the collector can also conduct electricity, the Through the above structure, the electric signal can be passed through the sub-module and the collector of the semiconductor power device in a timely manner.

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Abstract

The invention provides a semiconductor power device sub module and a production method thereof and a crimping-type IGBT module. The semiconductor power device sub module production method comprises the following steps: S1, an AgSn film solder paste is deposited on the silver plating surface of a molybdenum sheet; and S2, a chip is attached to the surface of the AgSn film solder paste through a fixture to form a to-be-sintered structure. According to the semiconductor power device sub module production method provided in the invention, the AgSn is firstly deposited on the molybdenum sheet, theAgSn has a strong thermal conductivity capability, and the heat transfer capability of the whole sub module can be ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a sub-module of a semiconductor power device, a production method thereof, and a crimping type IGBT module. Background technique [0002] As a new generation of fully-controlled power electronic devices, IGBT has become a mainstream device in the field of power electronics after more than 30 years of rapid development. and other fields are rapidly promoted. [0003] In the prior art, some practitioners have proposed a fully crimped IGBT module, that is, a plurality of chip positioning devices are installed inside the module, and then molybdenum sheets and chips are put into the positioning devices in sequence, and then crimped. Wherein, the gate of the IGBT chip is led out to the PCB through a spring terminal for interconnection. After adopting this structure, since each chip needs to be individually positioned, it is difficult to ensure a consistent pressur...

Claims

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Application Information

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IPC IPC(8): H01L21/60H01L29/739H01L23/488H01L23/373
CPCH01L24/83H01L23/3736H01L24/27H01L24/32H01L29/7393H01L2224/2745H01L2224/32501H01L2224/8384H01L2924/01047H01L2924/0105
Inventor 王亮武伟林仲康田丽纷韩荣刚唐新灵石浩张朋李现兵张喆
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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