Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Laser crystallization apparatus and control method of crystallization laser beam

A technology of laser crystallization and laser beams, which is applied in lasers, laser welding equipment, laser components, etc., can solve problems such as uneven crystallinity of amorphous silicon layers, and achieve the effect of improving crystallization quality

Active Publication Date: 2018-05-25
SAMSUNG DISPLAY CO LTD
View PDF12 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case where the intensity, irradiation angle, etc. of the laser beam irradiated at this time are not uniform, there is a problem that the crystallinity of the amorphous silicon layer may not be uniform

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laser crystallization apparatus and control method of crystallization laser beam
  • Laser crystallization apparatus and control method of crystallization laser beam
  • Laser crystallization apparatus and control method of crystallization laser beam

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] The advantages and features of the present invention, and the methods for achieving them will become clear when referring to the accompanying drawings and the embodiments described in detail below. However, the present invention can be implemented in mutually different forms and is not limited to the embodiments disclosed below. However, the purpose of providing the present embodiment is to complete the disclosure of the present invention and to provide basic knowledge in the technical field to which the present invention belongs. It is provided by a knowledgeable person fully introducing the scope of the invention, and the invention is defined only by the scope requested by the claims. Therefore, in many embodiments, in order to prevent the present invention from being interpreted vaguely, the well-known process steps, well-known element structures, and well-known technologies are not specifically described. Throughout the specification, the same reference signs refer t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

Disclosed is a laser crystallization apparatus capable of emitting a uniform laser beam and high quality crystallizing of a amorphous silicon layer and a method of controlling a crystallization laserbeam. The laser crystallization apparatus of the present invention comprises a laser beam generation part capable of emitting the laser beam, a homogenizer for homogenizing the laser beam, and a lightdiffusing portion; the homogenizer includes a beam splitting lens and a stacking mirror.

Description

Technical field [0001] Embodiments of the present invention relate to a laser crystallization device, and more particularly to a laser crystallization device that emits a uniform laser beam to achieve high-quality crystallization of an amorphous silicon layer and a method for controlling the crystallization laser beam. Background technique [0002] Generally, an organic light emitting display device or a liquid crystal display device uses thin film transistors to control whether or not to emit light or the degree of light emission of each pixel. Such a thin film transistor includes a semiconductor layer, a gate electrode, source / drain electrodes, etc., and as the semiconductor layer, polysilicon obtained by crystallizing amorphous silicon is mainly used. [0003] The manufacturing process of a thin film transistor substrate having a thin film transistor as described above or a display device using the thin film transistor substrate will be described. After forming an amorphous sili...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/53B23K26/06B23K26/064H01L21/02
CPCH01L21/02675B23K26/064B23K26/0648B23K26/53H01S3/0064H01S3/2256H01S3/034
Inventor 李童敏全祥皓姜美在徐宗吾苏炳洙
Owner SAMSUNG DISPLAY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com