Laser and its preparation method

Abstract

The present disclosure relates to a semiconductor laser, and provides a laser and a manufacturing method thereof. The laser includes: a substrate; an active layer located on the substrate; a grating layer located on the active layer, and the grating layer Comprising a uniform grating with a first duty ratio located in a first area and a uniform grating with a second duty ratio located in a second area, the first area is adjacent to the second area; The uniform grating with a duty cycle and the uniform grating with the second duty cycle can transmit light of the same wavelength. On the one hand, the overlap of light wavelengths transmitted by two gratings with different duty ratios is used, so that the lasing wavelength of the laser can obtain the lowest threshold gain and a good single-mode output spectrum. On the other hand, the holographic exposure process is adopted without changing Uniform gratings with different duty ratios are realized by changing the etching process, avoiding the use of expensive phase shift technology, simplifying the process flow and reducing the manufacturing cost.

Description

technical field [0001] The present disclosure relates to semiconductor lasers, in particular to a laser and a method for preparing the laser. Background technique [0002] In optical fiber communication, semiconductor lasers are widely used in the field of optical communication due to their advantages of small size, high efficiency, low power consumption, and easy integration. However, due to their single-mode output and narrow output spectrum, semiconductor lasers effectively reduce the power consumption of light in optical fibers. The dispersion broadening caused by medium transmission is suitable for high-speed modulation and long-distance optical fiber communication applications. [0003] At present, after the anti-reflection coating is coated on both ends of the uniform grating laser, there will be two degenerate longitudinal waves with the same gain. When the two ends have asymmetric coatings, this gain will be eliminated, because the laser wavelength depends on the R...

AI Technical Summary

Problems solved by technology

However, the particle direct writing method (such as EBL) usually used at present to prepare the phase shift grating has slow speed, low efficiency and high cost, and the phase shift grating will cause serious uneven distribution of the light field inside the laser chip, which will cause serious problems. Spatial hole burning effect reduces the stability of the output wavelength of the laser

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