A High Reliability Schottky Contact Super Barrier Rectifier
A technology of super barrier rectification and Schottky contact, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of large forward voltage drop and low forward surge reliability of devices, and achieve good electrical performance and thermal stability, good forward surge reliability capability
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Embodiment 1
[0028] like figure 2 As shown, a high reliability Schottky contact super barrier rectifier is characterized by comprising a lower electrode layer 10, a heavily doped first conductivity type substrate layer 20, a lightly doped first conductivity type epitaxial layer 30, Two conductivity type injection structures 41 , Schottky contact super-barrier rectifier cell sequence and upper electrode layer 90 .
[0029] The heavily doped first conductive type substrate layer 20 covers the lower electrode layer 10 .
[0030] The lightly doped first conductive type epitaxial layer 30 covers the heavily doped first conductive type substrate layer 20 .
[0031] The second conductive type implant structure 41 covers a part of the surface of the lightly doped first conductive type epitaxial layer 30 .
[0032] The Schottky contact super-barrier rectifier element package sequence covers part of the surface above the lightly doped first conductivity type epitaxial layer 30 .
[0033] The upp...
Embodiment 2
[0040] like figure 2 As shown, a high reliability Schottky contact super barrier rectifier is characterized by comprising a lower electrode layer 10, a heavily doped first conductivity type substrate layer 20, a lightly doped first conductivity type epitaxial layer 30, Two conductivity type injection structures 41 , Schottky contact super-barrier rectifier cell sequence and upper electrode layer 90 .
[0041] The heavily doped first conductive type substrate layer 20 covers the lower electrode layer 10 .
[0042] The lightly doped first conductive type epitaxial layer 30 covers the heavily doped first conductive type substrate layer 20 .
[0043] The second conductive type implant structure 41 covers a part of the surface of the lightly doped first conductive type epitaxial layer 30 .
[0044] The Schottky contact super-barrier rectifier element package sequence covers part of the surface above the lightly doped first conductivity type epitaxial layer 30 .
[0045] The upp...
Embodiment 3
[0052] like figure 2 As shown, a high reliability Schottky contact super barrier rectifier is characterized by comprising a lower electrode layer 10, a heavily doped first conductivity type substrate layer 20, a lightly doped first conductivity type epitaxial layer 30, Two conductivity type injection structures 41 , Schottky contact super-barrier rectifier cell sequence and upper electrode layer 90 .
[0053] The heavily doped first conductive type substrate layer 20 covers the lower electrode layer 10 .
[0054] The lightly doped first conductive type epitaxial layer 30 covers the heavily doped first conductive type substrate layer 20 .
[0055] The second conductive type implant structure 41 covers a part of the surface of the lightly doped first conductive type epitaxial layer 30 .
[0056] The Schottky contact super-barrier rectifier element package sequence covers part of the surface above the lightly doped first conductivity type epitaxial layer 30 .
[0057] The upper...
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