Method for solving wafer thin film layer stripping, and cleaning device
A technology for cleaning devices and thin-film layers, which is applied to radiation control devices, electrical components, and electric solid-state devices, etc., and can solve problems such as the inability to realize the etching of thin-film layers on the crystal back
Inactive Publication Date: 2018-06-01
WUHAN XINXIN SEMICON MFG CO LTD
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[0002] When the wafer is prepared to form a CIS (Color Image Sensor, CIS, color image sensor) device, since the surface of the wafer is covered with a thin film layer, and the thin film layer located at the edge of the wafer will peel off, so the peeling process needs to be removed by etching. When removing the thin film layer on the edge of the wafer, the existing industry adopts dry etching process, but dry etching can only etch the edge area of the front of the wafer, which cannot be realized. Etching of the thin film layer on the back of the wafer, and the area etched on the front of the wafer by dry etching depends on the hardware of the machine
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[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0031] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.
[0032] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
[0033] The technical solution of the invention includes a method for solving the peeling off of the thin film la...
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The invention provides a method for solving wafer thin film layer stripping, and a cleaning device. The method is applied to the cleaning device. The cleaning device comprises an accommodating cavityand an electronic chuck disposed in the accommodating cavity, wherein the electronic chuck is used for accommodating a wafer, and the front surface of the water comprises a thin film layer and an etching region positioned at the edge of the wafer. The method comprises the steps of: step S1, fixedly placing the front surface of the wafer downwardly on the electronic chuck; step S2, controlling theelectronic chuck to rotate so as to drive the wafer to rotate; step S3, spraying an acidic cleaning agent onto the back surface of the wafer, so that the acidic cleaning agent flows to the etching region on the surface of the wafer to etch away the thin film layer in the etching region; step S4, spraying a solvent onto the back surface of the wafer; step 5, and covering the solvent on the etchingregion so as to remove the acidic cleaning agent and the thin film layer remaining in the etching region. The method has the beneficial effects of overcoming the defect that the thin film layer fallsoff at the edge of the wafer and is difficult to remove in the prior art.
Description
technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a method and a cleaning device for solving the peeling off of a wafer thin film layer. Background technique [0002] When the wafer is prepared to form a CIS (Color Image Sensor, CIS, color image sensor) device, since the surface of the wafer is covered with a thin film layer, and the thin film layer located at the edge of the wafer will peel off, so the peeling process needs to be removed by etching. When removing the thin film layer on the edge of the wafer, the existing industry adopts dry etching process, but dry etching can only etch the edge area of the front of the wafer, which cannot be realized. The etching of the thin film layer on the back of the crystal, and the area etched on the front of the wafer by dry etching depends on the hardware of the machine. Contents of the invention [0003] In view of the above-mentioned problems of the peeling off of the th...
Claims
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IPC IPC(8): H01L21/02H01L21/67H01L27/146
CPCH01L21/02057H01L21/67051H01L27/14687
Inventor 刘浩王晟张兴平褚海波魏广升
Owner WUHAN XINXIN SEMICON MFG CO LTD