Complementary-type SiC bipolar integration transistor and manufacturing method thereof
A manufacturing method and transistor technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as insufficient performance of bipolar integrated circuits, complex design of pure SiCnpn transistor integrated circuits, etc., achieve good application prospects, simplify Design complexity, performance-enhancing effects
Active Publication Date: 2018-06-01
无锡市乾野微纳科技有限公司
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[0005] The purpose of the present invention is to provide a complementary SiC bipolar integrated transistor, which solves the problems of complex design of pure SiCnpn transistor integrated circuits in the prior art and insufficient performance of traditional complementary SiC bipolar integrated circuits
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[0057] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0058] The upper and lower orientations in the following text start with figure 1 Shown is a reference, actual location and so on.
[0059] refer to figure 1 , Figure 13 The structure of the complementary SiC bipolar integrated transistor of the present invention is to include a substrate 1 (i.e. a semi-insulating SiC substrate), the thickness of the substrate 1 is 100 μm-1000 μm, and the surface area of the upper and lower ends of the substrate 1 is 0.01 μm 2 -2000cm 2 ;
[0060] The upper end surface of the substrate 1 is provided with a first epitaxial layer 2, that is, the emitter region of the npn transistor. The material of the first epitaxial layer 2 is n-type SiC, and the thickness of the first epitaxial layer 2 is 0.1 μm-5.0 μm. The surface area of the upper and lower ends of the first epitaxial layer 2 is 0.01 μm 2 -2000c...
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The present invention discloses a complementary-type SiC bipolar integration transistor. 8 epitaxial layers are arranged in order on a substrate, passivation layers coat the surface and sides of eachepitaxial layer and the upper surface of the substrate out of the tail end of the first epitaxial layer; an electrode 1 covers the upper end face of the eighth epitaxial layer, an electrode 2 covers the surface of the upper end of the seventh epitaxial layer out of the tail end of the eighth epitaxial layer, an electrode 3 covers the surface of the upper end of the sixth epitaxial layer out of thetail end of the seventh epitaxial layer, an electrode 4 covers the surface of the upper end of the third epitaxial layer out of the tail end of the fourth epitaxial layer, an electrode 5 covers the surface of the upper end of the second epitaxial layer out of the tail end of the third epitaxial layer, and an electrode 6 covers the surface of the upper end of the first epitaxial layer out of the tail end of the second epitaxial layer. The present invention further discloses a manufacturing method of a complementary-type SiC bipolar integration transistor. A pnp transistor and an npn transistoremploy an up-down distribution vertical structure, and structure parameter designs are mutually independent.
Description
technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and relates to a complementary SiC bipolar integrated transistor, and also relates to a manufacturing method of the complementary SiC bipolar integrated transistor. Background technique [0002] SiC integrated circuits made of silicon carbide (SiC) materials have the advantages of large band gap, high thermal conductivity, high critical avalanche breakdown electric field strength, high saturated carrier drift velocity and good thermal stability. SiC integrated circuits The ability to work in extreme environments has also been recognized by the industry. Among them, SiC bipolar integrated circuits are more suitable for high-temperature environments because they do not have the reliability problem of the gate oxide layer. However, due to the unique properties of SiC, its integrated bipolar transistors and fabrication processes are not compatible with existing technologies...
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IPC IPC(8): H01L27/082H01L21/8228H01L29/16
CPCH01L21/82285H01L27/0826H01L29/1608
Inventor 蒲红斌王曦胡丹丹封先锋
Owner 无锡市乾野微纳科技有限公司