Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Grinding fluid and preparation method thereof, and chemical-mechanical polishing method

A technology of grinding liquid and oxidizing agent, which is applied in the field of preparation of grinding liquid, grinding liquid, and chemical mechanical grinding. Effect of circular grinding damage

Inactive Publication Date: 2018-06-05
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of storage and transportation, the above-mentioned technical means cannot be controlled over time or even slight temperature changes, resulting in coagulation and sedimentation of the grinding liquid

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grinding fluid and preparation method thereof, and chemical-mechanical polishing method
  • Grinding fluid and preparation method thereof, and chemical-mechanical polishing method
  • Grinding fluid and preparation method thereof, and chemical-mechanical polishing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] The invention provides a grinding liquid, which comprises (Fe 3 N)TiO 2 Particles and solvents, where (Fe 3 N)TiO 2 The particle content is 5% to 35% of the total weight of the grinding liquid. The present invention adopts (Fe 3 N)TiO 2 As the main component of abrasive particles in the abrasive liquid, the particles are different from the non-magnetic particles in the traditional abrasive liquid, and the magnetic (Fe 3 N)TiO 2 The particles are uniformly and regularly distributed in the grinding liquid under the action of an external magnetic field. Figure 1A , so that the viscosity of the grinding liquid increases sharply, which can effectively reduce the sedimentation of the grinding liquid during storage and transportation. At the same time, the magnetism of the magnetic particles is reversible. Under the action of no external magnetic field, the dispersion of the magnetic particles in the grinding liquid is the same as that of the traditional grinding liquid...

Embodiment 2

[0060] The present invention also provides a method for preparing grinding liquid, comprising:

[0061] Preparation (Fe 3 N)TiO 2 particles;

[0062] Will (Fe 3 N)TiO 2 The particles are mixed with a solvent.

[0063] Exemplary, the preparation (Fe 3 N)TiO 2 The pelleting steps include:

[0064] Preparation of Fe 3 N-core;

[0065] Preparation of TiO 2 shell, the TiO 2 The shell covers the Fe 3 N cores.

[0066] Specifically, by first preparing the magnetic core Fe 3 N, and then proceed to make SiO 2 The shell covers the magnetic core Fe 3 N and the step of growing to prepare the magnetic abrasive particles (Fe 3 N)SiO 2 . It should be understood that the present embodiment uses the core-shell structure (Fe 3 N)TiO 2 The principle of the present invention is explained as an embodiment, and it is not intended to explain (Fe 3 N)TiO 2 Particle structure is restricted, others make (Fe 3 N)TiO 2 Particles with both magnetic and abrasive properties (Fe 3 N)...

Embodiment 3

[0099] The present invention also provides a kind of chemical mechanical polishing method, because in this method, except using the magnetic grinding liquid of the present invention, others are all the same as the conventional chemical mechanical polishing method, so the method will not be repeated here. .

[0100] To sum up, the grinding liquid described in the present invention has special magnetic properties, which increases the viscosity of the grinding liquid in a magnetic field, effectively reduces sedimentation during transportation and storage, and ensures the stability of the grinding liquid. Thereby reducing wafer grinding damage in the chemical mechanical polishing process and improving product yield. At the same time, the magnetic properties of the grinding liquid are reversible, and the grinding liquid has the same function as the grinding liquid in the prior art when no external magnetic field is applied.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
The average particle sizeaaaaaaaaaa
The average particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention provides a grinding fluid, comprising (Fe3N)TiO2 particles and a solvent, wherein the content of the (Fe3N)TiO2 particles accounts for 5% to 35% of the total weight of the grinding fluid. The grinding fluid in the invention has such special magnetic properties that the viscosity of the grinding fluid increases in a magnetic field, so the sedimentation of the grinding fluid during transportation and storage is effectively reduced, and the stability of the grinding fluid is ensured. As a result, the grinding fluid can reduce the grinding damage of wafers in a chemical-mechanical grinding process and improve product yield. At the same time, the magnetic properties of the grinding fluid are reversible; and when no external magnetic field is applied, the grinding fluid has the same function as grinding fluids in the prior art.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a grinding liquid, a method for preparing the grinding liquid and a chemical mechanical grinding method. Background technique [0002] The polishing liquid used in the chemical mechanical polishing process to planarize the wafer surface is currently widely used to use non-magnetic particles such as SiO 2 or Al 2 o 3 or TiO 2 A slurry dispersed in a solvent. These polishing liquids are unstable and prone to sedimentation due to changes in time and temperature. Once condensation occurs, the surface of the wafer will be scratched, resulting in rough surfaces and a decrease in product yield. [0003] In order to prevent the solid particles from settling in the solvent, the prior art usually adopts ultrasonic, stirring, and reasonable temperature control to avoid the grinding liquid from settling and agglomerating. However, during the storage and transportation process,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09G1/02B24B37/00C09K3/14
CPCB24B37/00C09G1/02C09K3/1463C09K3/1472
Inventor 王芬王立众禹菲菲姚文磊张欢欢
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products