Thin film transistor, manufacturing method thereof, display panel, and display device
A technology of thin film transistors and protective layers, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as the performance impact of thin film transistors and the ineffectiveness of final products
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Embodiment 1
[0028] figure 1 A schematic structural diagram of a thin film transistor provided in Embodiment 1 of the present invention, as shown in figure 1 As shown, the thin film transistor proposed in this embodiment includes an organic layer 11 and a barrier layer 12 sequentially formed on a substrate 10, a protective layer 13, a buffer layer 14 and a channel region 15 formed on the barrier layer 12, The gate insulating layer 16 located on the buffer layer 14 and covering the channel region 15, the gate 17 located on the gate insulating layer 16, the gate 17 located on the positive side of the channel region 15 Above, an interlayer insulating layer 18 located on the gate insulating layer 16 and covering the gate 17, a via hole is formed on the interlayer insulating layer 18 and the gate insulating layer 16 to the channel region 15, The through hole is filled with metal to form a source and a drain 19 , and the source and drain 19 are connected to the channel region 15 through the thr...
Embodiment 2
[0034] figure 2 Schematic diagram of the structure of the thin film transistor provided by Embodiment 2 of the present invention, as shown in figure 2 As shown, on the basis of the first embodiment, the thin film transistor further includes being located in the barrier layer, that is, at least one groove is formed in the barrier layer, and the protection layer is located in the groove.
[0035] The thin film transistor proposed in this embodiment includes an organic layer 110 and a barrier layer 120 sequentially formed on a substrate 100, a protective layer 130 formed in the barrier layer 120, and formed on the barrier layer 120 and the protective layer 130 The buffer layer 140 and the channel region 150, the gate insulating layer 160 located on the buffer layer 140 and covering the channel region 150, the gate 170 located on the gate insulating layer 160, the gate 170 is located directly above the channel region 150, is located on the gate insulating layer 160 and covers t...
Embodiment 3
[0041] The present invention provides a method for preparing the thin film transistor described in Embodiment 1, forming such as figure 1 The thin film transistor shown, the manufacturing method of the thin film transistor includes: sequentially forming an organic layer 11, a barrier layer 12, a buffer layer 14, a channel region 15, a gate insulating layer 16, a gate 17, a layer Interlayer insulating layer 18 and source and drain 19, wherein, after forming said barrier layer 12, before forming said buffer layer 14, form protective layer 13 on said barrier layer 12, said buffer layer 14 is formed Above the protection layer 13 , a projection of the protection layer 13 in a direction toward the channel region 15 covers the channel region 15 .
[0042] Figure 3-6 For the structural diagram of each step of the manufacturing method of the thin film transistor provided in the third embodiment of the present invention, please refer to Figure 3 ~ Figure 6 Shown in detail, the prese...
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