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Channel layer structure and preparation method, and thin film transistor device and preparation method

A technology of thin film transistor and channel layer, which is used in the manufacture of semiconductor/solid state devices, transistors, semiconductor devices, etc., to ensure the display effect, improve reliability, and eliminate the effect of the overall piezoresistive effect.

Active Publication Date: 2020-04-17
CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention provides a channel layer structure and its preparation method, as well as a thin film transistor device and its preparation method, which solves the problem that the existing channel layer structure cannot avoid the influence of strain on the display effect of flexible display devices

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  • Channel layer structure and preparation method, and thin film transistor device and preparation method
  • Channel layer structure and preparation method, and thin film transistor device and preparation method
  • Channel layer structure and preparation method, and thin film transistor device and preparation method

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Embodiment Construction

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0036] A channel layer structure provided by an embodiment of the present invention includes: at least two channel regions connected in series. In order to ensure that the entire channel layer is in a conduction state when the conductive channel is formed, the channel regions in the channel layer should be in a series state. It should be understood that the series connection mentioned here refers to the series connection in the electrical sense. In f...

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Abstract

The invention provides a channel layer structure, a preparation method thereof, a thin film transistor device and a preparation method thereof, and the problem that the influence of strain on the display effect of a flexible display device can not be avoided in an existing channel layer structure is solved. The channel layer structure includes at least two channel regions connected in series, wherein the volume ratio of each channel region in the at least two channel regions is set according to the respective piezoresistive effect of each channel region such that the overall mobility ratio ofa channel layer does not change with the strain.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a channel layer structure and a preparation method thereof, a thin film transistor device and a preparation method thereof. Background technique [0002] For flexible display devices, whether the thin film transistor devices can work normally has a crucial impact on reliability. In the bending or stretching process with a small strain (that is, in the elastic range, the strain is less than 1%, and generally the thin film transistor device will not produce cracks in this range), the thin film transistor device is affected by tensile stress or compressive stress. The channel layer will also be slightly deformed accordingly. However, due to the unique piezoresistive effect of semiconductors, small deformations of these channel layers will lead to corresponding changes in the electrical properties of thin film transistors. For example, for a channel layer using low-te...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/10H01L21/336
CPCH01L29/1054H01L29/6675H01L29/78696
Inventor 胡坤林立蔡世星单奇刘胜芳
Owner CHENGDU VISTAR OPTEOLECTRONICS CO LTD