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Adjustments to the rf amplifier

An amplifier, amplifier stage technology, used in amplifiers, high-frequency amplifiers, radio frequency amplifiers and other directions

Active Publication Date: 2021-05-11
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Increases in transmission frequencies (now tens of gigahertz) in these applications and their integration with CMOS or BiCOMS technologies in low-consumption applications have created new constraints on the production process for these applications, especially with regard to bias and consumption

Method used

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  • Adjustments to the rf amplifier
  • Adjustments to the rf amplifier
  • Adjustments to the rf amplifier

Examples

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Embodiment Construction

[0025] The same elements are indicated with the same symbols in different figures. For the sake of clarity, only elements useful to the understanding of the embodiment to be described are shown and will be described in detail. In particular, the circuits upstream and downstream of the RF amplifier and its bias currents are not shown in detail, the described embodiments being compatible with these currents are generally connected to the RF amplifier. Furthermore, without specifying the various possible applications of the RF amplifier, the embodiments described here are also compatible with conventional applications. In the following description, the expressions "approximately", "about", "approximately" mean within 10%, preferably within 5%.

[0026] It should be noted that in the drawings, structural and / or functional elements common to different embodiments may have the same reference and may have the same structure, size and hardware characteristics.

[0027] figure 1 is ...

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PUM

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Abstract

The invention relates to the regulation of an RF amplifier, for example, a power supply and bias stage (4) of a radio frequency amplifier (1), the amplification stage (3) of which comprises at least one MOS transistor, the control terminal of which is connected to input terminal (31), and the first conduction terminal of the MOS transistor is connected to the output terminal (36), wherein the bias voltage of the control terminal of said transistor is controlled in such a way that it is simultaneously adjusted at a nominal value The supply voltage of the amplifier stage and the bias current of the amplifier stage are adjusted at nominal values.

Description

technical field [0001] This specification relates generally to electronic circuits, and more particularly to regulation of power supplies and biasing of radio frequency (RF) amplifiers. Background technique [0002] Radio frequency amplifiers are used in many applications to amplify various digital and analog signals. In particular, such amplifiers are used at high frequencies in applications for transmitting radio signals. [0003] Increases in transmission frequencies (now reaching tens of gigahertz) in these applications and their integration with CMOS or BiCOMS technologies in low-consumption applications have created new constraints on the production process for these applications, especially with regard to bias and consumption. Contents of the invention [0004] One embodiment proposes an RF amplifier circuit that fully or partially overcomes the disadvantages of biasing and regulation methods. [0005] One embodiment presents a solution suitable for high frequency...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/02H03F1/30H03F3/19H03F1/56H03F3/45
CPCH03F1/0211H03F1/301H03F1/56H03F3/19H03F3/45179H03F2203/45026H03F2203/45031H03F2200/447H03F2200/451H03F1/0272H03F1/30H03F3/189H03F3/193H03F2200/15H03F2200/18H03F2200/78H03F3/423H03G3/30H03G3/3015H03G3/3036H03G3/3047
Inventor L·福格特
Owner STMICROELECTRONICS SRL