Semiconductor device
一种半导体、导电类型的技术，应用在半导体器件、电气元件、电路等方向，能够解决开关速度不充分等问题，达到提高开关速度的效果
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment approach 1
[0051] figure 1 as well as figure 2 Each is a partial cross-sectional view schematically showing the structure of the MOSFET 901 (semiconductor device) in this embodiment. figure 1 vision along the figure 2 the line I-I, figure 2 vision along the figure 1 The line II-II.
[0052] In MOSFET 901, when viewed from above (with figure 2 The corresponding field of view, in other words, the field of view corresponding to the plane perpendicular to the thickness direction), exists in the length direction ( figure 2 A plurality of active strip-shaped regions RA extending in the lateral direction) and a plurality of contact strip-shaped regions RC extending in the longitudinal direction. In MOSFET 901, in the direction perpendicular to the length direction ( figure 2 In the longitudinal direction), the active strip-shaped region RA and the contact strip-shaped region RC are alternately and repeatedly arranged, thereby providing a strip-shaped pattern. The active band re...
Embodiment approach 2
[0109] Figure 16 as well as Figure 17 Each is a partial cross-sectional view schematically showing the structure of the MOSFET 908 (semiconductor device) in this embodiment. Figure 16 vision along the Figure 17 The lines XVI-XVI, Figure 17 vision along the Figure 16 Lines XVII-XVII. also, Figure 16 vision and figure 2 same, Figure 17 vision and figure 1 same.
[0110] MOSFET 908 except MOSFET 901 ( figure 1 as well as figure 2 ) structure, also has a support area 207. The supporting region 207 protrudes from the bottom of the strap-shaped trench TS separately from the source electrode 5 between the active strap-shaped region RA and the contact strap-shaped region RC. Therefore, the support region 207 is not connected to the source electrode 5 and therefore has no electrical function. The support region 207 has a pair of opposite sides. The strip-shaped gate electrode 204S has portions adjacent to each of a pair of side surfaces of the support region 2...
Embodiment approach 3
[0122] Figure 18 as well as Figure 19 Each is a partial cross-sectional view schematically showing the structure of the MOSFET 909 (semiconductor device) in this embodiment. Figure 18 vision along the Figure 19 of lines XVIII-XVIII, Figure 19 vision along the Figure 18 The lines XIX-XIX. also, Figure 18 vision and figure 2 same, Figure 19 vision and figure 1 same.
[0123] The MOSFET 909 differs from the MOSFET 901 only in the structure of the active band region RA. Specifically, MOSFET 909 except MOSFET 901 ( figure 1 as well as figure 2 ) structure, it also has a middle trench TM and a middle gate electrode 204M. The middle trench TM is provided between two adjacent strip-shaped trenches TS among the plurality of strip-shaped trenches TS. The middle trench TM penetrates the source region 303 and the base region 302 to reach the drift layer 2 . The depth of the middle trench TM is smaller than that of the strip-shaped trench TS. The protective diffu...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More