A Lattice-Scaled Fractional-Order Memristor with Arbitrary-Order Low-Pass Filtering
A technology of low-pass filtering and memristor, applied in the field of memristor, can solve the problem of violating Landauer's principle of minimum energy, and achieve the effect of improving accuracy
Active Publication Date: 2021-10-19
深圳璞芯智能科技有限公司
View PDF2 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
So-called non-volatile flow-controlled memristors alone do not make this memristive system immune to the effects of white noise, and its dynamic equations allow violation of Landauer's principle of minimum energy
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0026] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
[0027] The lattice-scale fractional-order memristor of the v-order low-pass filter of the present invention (v=n+p is an arbitrary positive rational number, wherein, n is a positive integer, 0figure 1 As shown, it includes n repeated lattice structures, and the lattice structures are cascaded; each stage lattice structure includes two memristors and two capacitors, wherein the input terminal of the first memristor is connected to The first capacitor is connected between the output ends of the second memristor, and the second capacitor is connected between the output end of the first memristor and the input end of the second memristor; the memristor in each level lattice structure The reactance value of the memristor is α times the reactance value of the previous stage memristor, and the reactance value of the capacitor in each stage lattice stru...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The present invention proposes a lattice-scale fractional-order memristor with arbitrary order low-pass filtering, including n A repeated lattice structure, the lattice structure is cascaded; each stage lattice structure includes two memristors and two capacitors, wherein the cascade input terminal of the first memristor is connected to the second memristor A first capacitor (or first inductor) is connected between the cascade output terminals of the first memristor, and a second capacitor (or first inductor) is connected between the cascade output terminal of the first memristor and the cascade input terminal of the second memristor. Two inductors); the reactance value of the memristor in each level lattice structure is twice the reactance value of the previous level memristor, and the reactance value of the capacitor (inductance) in each level lattice structure is the previous level capacitance ( or inductance) times the reactance value. The order of the lattice-scale fractional-order memristor of arbitrary-order low-pass filtering of the present invention is only related to the parameter sum, and the lattice-scale fractional-order memristor of arbitrary-order low-pass filtering can be realized by adjusting the sum.
Description
technical field [0001] The invention relates to the technical field of memristors, in particular to a lattice-scale fractional-order memristor for arbitrary-order low-pass filtering. Background technique [0002] Memristor as a lost nonlinear passive two-terminal component was conjectured by Cai Shaotang and extended to the memristive system, which is non-volatile. A broader definition holds that memristors based on resistive switching effects can cover all forms of double-terminal nonvolatile memories. So-called non-volatile flow-controlled memristors alone do not make this memristive system immune to the effects of white noise, and its dynamic equations allow a violation of Landauer's principle of the minimum amount of energy. Memristors can generally be divided into five categories: titanium dioxide memristors, polymer memristors, layered memristors, ferroelectric memristors, and spin memristor systems. The electrical properties of the above-mentioned memristor and memr...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H03H7/01
CPCH03H7/0153
Inventor 蒲亦非
Owner 深圳璞芯智能科技有限公司