Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of nand Flash control method, device and SSD

A technology of control method and command information, which is applied in the field of NAND Flash, can solve the problems of low efficiency of NAND Flash, achieve the effect of reducing occupancy rate and improving efficiency

Active Publication Date: 2021-11-12
HUNAN GOKE MICROELECTRONICS
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] This application provides a NAND Flash control method, device and SSD to solve the problem of low efficiency of traditional NAND Flash when performing read and write operations

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of nand Flash control method, device and SSD
  • A kind of nand Flash control method, device and SSD
  • A kind of nand Flash control method, device and SSD

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The application will be described in detail below in conjunction with the accompanying drawings.

[0023] see figure 1 A method flowchart of an embodiment of the NAND Flash control method provided by the application, such as figure 1 As shown, the method includes:

[0024] S101. Determine an initial command template table for NAND Flash read and write instructions, where different templates in the command template table correspond to different command types, initial addresses, and particle information.

[0025] When the reading and writing of the system are converted into reading and writing under the interface defined by NAND particles, it will be accompanied by a lot of complicated and repetitive configuration work. Some command sets stipulated by the NAND Flash interface protocol belong to a fixed mode, which will occupy a large amount of CPU resources, reducing system performance. In the embodiment of the present application, all initial parameters in the NAND Fl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the present application discloses a NAND Flash control method, device, and SSD, including: determining an initial command template table for NAND Flash read and write instructions, and different templates in the command template table correspond to different command types, initial addresses, and particle information ; calling the corresponding command template in the command template table according to the initial address parameter in the acquired command information; configuring the key information of the command information into the command template to complete the command operation. Command templates corresponding to different read and write command information are configured in the command template table. When a read or write command is obtained and needs to be executed, the corresponding command template in the command template table is matched according to the initial address parameters of different commands, avoiding the execution of different commands. The instruction needs to configure the initial parameters repeatedly, which reduces the CPU usage and improves the efficiency of NAND Flash read and write operations.

Description

technical field [0001] The present application relates to the field of memory technology, in particular to a NAND Flash control method, device and NAND Flash. Background technique [0002] A memory system is mainly composed of an application layer master control, a data cache device, a storage controller and a storage device. If the storage device is to be accessed in the storage system, a hardware controller is required to convert the operation instructions of the application layer master into the command set defined by the physical layer of the storage device. As a common storage device, NAND Flash has the advantages of large capacity, fast rewriting speed, and low data loss. It is suitable for large-scale data storage and has been more and more widely used in the industry. [0003] In a system, when reading and writing NAND Flash, a hardware controller is needed to convert the reading and writing of the system into reading and writing under the interface defined by the N...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/10
CPCG11C7/1015G11C7/103
Inventor 殷涛彭鹏姜黎
Owner HUNAN GOKE MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com