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Method for detecting infrared sensor and infrared signal intensity

An infrared sensor and infrared absorption layer technology, applied in the semiconductor field, can solve the problems affecting the accuracy of infrared intensity detection and low sensitivity, and achieve the effects of improving sensitivity and accuracy, high carrier mobility, and excellent optical properties

Active Publication Date: 2018-06-22
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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Problems solved by technology

Existing infrared sensors that use thermal detection to detect infrared signal intensity usually have problems such as low sensitivity, which easily affects the accuracy of the final infrared intensity detection

Method used

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  • Method for detecting infrared sensor and infrared signal intensity
  • Method for detecting infrared sensor and infrared signal intensity
  • Method for detecting infrared sensor and infrared signal intensity

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Embodiment Construction

[0026] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals denote the same or similar structures in the drawings, and thus their repeated descriptions will be omitted.

[0027] The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of embodiments of the invention. However, those skilled in the art will appreciate that the technical solutions of the present invention may be practiced without one or more of the specific...

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Abstract

The invention discloses a method for detecting an infrared sensor and infrared signal intensity. The infrared sensor includes a metal layer, a ferroelectric material layer arranged at one side of themetal layer, a graphene material layer arranged at one side of the ferroelectric material layer which is away from the metal layer, an electrode layer arranged at one side of the graphene material layer which is away from the ferroelectric material layer, an infrared absorption layer arranged at one side of the electrode layer which is away from the graphene material layer, and a heat conduction layer arranged at an outer side of the ferroelectric material layer, graphene material layer and electrode layer and connected with the infrared absorption layer and metal layer. The infrared sensor can effectively improve the sensitivity and degree of accuracy of infrared signal intensity detection.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an infrared sensor and a method for detecting infrared signal intensity using the infrared sensor. Background technique [0002] Infrared sensor is a measurement system using infrared as the medium, which can be divided into photon detection and thermal detection according to the detection mechanism. Infrared sensing technology has been widely used in the fields of modern science and technology, national defense, industry and agriculture. Existing infrared sensors that use thermal detection to detect infrared signal intensity usually have problems such as low sensitivity, which easily affects the accuracy of the final infrared intensity detection. [0003] At present, graphene material has received extensive attention due to its high carrier mobility and excellent optical characteristics. The present invention hopes to provide an infrared sensor made of graphene material, by utiliz...

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Application Information

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IPC IPC(8): H01L31/028H01L31/101G01J5/00
Inventor 康晓旭
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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