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Power device module and preparation method thereof

A technology of power devices and modules, which is applied in the field of power device modules and its preparation, can solve the problems of high contact thermal resistance and contact resistance, poor heat dissipation of power devices, etc.

Active Publication Date: 2018-06-29
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] In view of the above analysis, the present invention proposes a power device module and its preparation method to solve the problem of poor heat dissipation of power devices caused by the high contact thermal resistance and contact resistance of existing crimping power devices

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  • Power device module and preparation method thereof
  • Power device module and preparation method thereof
  • Power device module and preparation method thereof

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Embodiment Construction

[0036] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0037] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "inner", "outer" and the like are based on the orientation or positional relationship shown in the accompanying drawings, and are only for It is convenient to describe the present invention and simplify the description, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a ...

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Abstract

The invention provides a power device module and a preparation method thereof. The power device module comprises a power chip, a first metal film and a second metal film, wherein the first metal filmand the second metal film are arranged on the upper surface and the lower surface of the power chip respectively. The problem that the heat dissipation of the power device is poor caused by the fact that the contact thermal resistance and contact resistance of an existing pressing type power device are relatively high is solved, and the initial failure phenomenon of the power device module is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging, in particular to a power device module and a preparation method thereof. Background technique [0002] Due to its dense chip layout, double-sided heat dissipation, high power density, high reliability, and easy series connection, the series connection of the press-fit IGBT module greatly simplifies the main circuit structure and greatly reduces the control complexity. The reduction makes the device more compact and lighter, and the reliability will not be significantly reduced with the increase of the voltage fan of the device. Therefore, crimp-type IGBT devices have gradually become mainstream devices in power grids, and are very suitable for high-voltage and high-power applications such as power systems, electric locomotives, and smart grids. With the rapid increase in voltage and current parameters, they have been used in electric locomotives, Smart grid and other fields are r...

Claims

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Application Information

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IPC IPC(8): H01L23/31H01L23/522H01L21/50
CPCH01L21/50H01L23/31H01L23/522
Inventor 田丽纷王亮李现兵石浩张朋唐新灵林仲康韩荣刚张喆
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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