Epitaxial structure and growth method of ultraviolet LED with aluminum nitride film

Abstract

The invention provides an epitaxial structure of an ultraviolet LED with an aluminum nitride film and a growth method thereof. The growth method of the aluminum nitride film comprises the following steps: 1) growing a metal layer on the substrate; 2) annealing the substrate to form a metal ball layer on the metal layer; 3) etching the substrate to form a pitted substrate; 4) when the temperature rises to 600-1200°C, trimethylaluminum and ammonia gas are introduced into the reaction chamber to grow the buffer growth layer; 5) the temperature rises to 1250-1450°C, and the second The first growth mode and the second growth mode are grown alternately and cyclically, and the aluminum nitride layer in the intermediate state is grown; 6) The temperature is lowered to 1100-1250 ° C, and the aluminum nitride layer is fed with trimethylaluminum and ammonia for the third growth Pattern growth. The crystal quality of the aluminum nitride thin film prepared by the method is good, and the surface cracks of the aluminum nitride thin film can be reduced.

Description

technical field [0001] The invention relates to a growth method technology of an aluminum nitride film, in particular to an epitaxial structure of an ultraviolet LED with an aluminum nitride film and a growth method thereof. Background technique [0002] Aluminum nitride (AlN) belongs to the third-generation wide bandgap semiconductor material, which has the advantages of high bandgap width, high breakdown electric field, high thermal conductivity, high electron saturation rate and high radiation resistance. Aluminum nitride crystals have a stable hexagonal wurtzite structure with a lattice constant of Aluminum nitride has the largest direct band gap of about 6.2eV among III-V non-semiconductor materials, and is an important blue and ultraviolet luminescent material. It has high thermal conductivity, high resistivity, strong breakdown field, and small dielectric coefficient. It is an excellent electronic material for high-temperature, high-frequency and high-power devices....

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Problems solved by technology

[0004] However, the quality of aluminum nitride crystals prepared by high-temperature deposition equipment is not good, and due to the large difference between the lattice constant of aluminum nitride and the lattice constant of the substrate, there is a large degree of lattice mismatch, which leads to nitridation. Aluminum surface prone to cracks

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