Grid scanning drive circuit

Abstract

The invention discloses a grid scanning drive circuit which comprises N levels of drive circuit units, and N represents a positive integer greater than 3. The n level of drive circuit unit (n represents a positive integer greater than or equivalent to 1 and lower than or equivalent to N) comprises a pull-up control module, a pull-up module, a pull-down module, a maintaining control node generationmodule, a pull-up control mode maintaining module and an output node maintaining module; and when n is greater than or equivalent to 2 and lower than or equivalent to N-1, the maintaining control node generation module of the n level drive circuit unit is connected with the pull-up control mode maintaining module of the n-1 level of drive circuit unit and the pull-up control mode maintaining module of the n+1 level of drive circuit unit, and the pull-up control mode maintaining module of the n level of drive circuit unit is connected with the maintaining control node generation module of then-1 level of drive circuit unit and the maintaining control node generation module of the n+1 level of drive circuit unit.

Description

technical field [0001] The invention relates to the field of liquid crystal display, in particular to a grid scanning driving circuit. Background technique [0002] The gate scanning lines of flat panel displays were generally driven by integrated circuit chips (Gate IC) before, and the integrated gate scanning drive circuit (Gate Driver Monolithic, GDM) is a method that utilizes the existing manufacturing process of thin film transistor array substrates. The technology in which the gate scanning driving circuit is directly built on the array substrate has the functions of reducing cost, reducing process flow, and reducing the width of the panel frame. With the development of products and technologies, flat panel displays have higher and higher requirements for gate scanning driving circuits, one of which is to have forward scanning and reverse scanning functions at the same time. [0003] figure 1 Shown is a schematic circuit diagram of an existing gate scanning drive cir...

AI Technical Summary

Problems solved by technology

However, the characteristics of U2D and D2U are mutually inverse, so that the two thin film transistors M5 and M7 in the maintenance control node generation module 4 are subjected to bias stresses of opposite signs for a long time, resulting in threshold voltage shifts in opposite directions, which will reduce the pull-up after switching the scanning direction. The control node maintains the ability to maintain the module 5, and the use of U2D and D2U signals reduces the reliability of the circuit and also increases the complexity of the circuit

[0005] On the other hand, the pull-up control node maintenance module 5 only includes a thin film transistor M8 to maintain the pull-up control node netAn, and half of the time cannot be maintained, and the maintenance capability is weak.

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