Junction type field effect transistor and manufacturing method thereof

Abstract

The invention relates to a junction type field effect transistor and a manufacturing method thereof. The junction type field effect transistor comprises a substrate, an epitaxial layer and a mask dielectric layer, wherein the epitaxial layer and the mask dielectric layer are sequentially arranged on the substrate; the epitaxial layer internally comprises a first conductive type well region, the first conductive type well region is provided with a drain region and a source region; and the mask dielectric layer defines the source region and the drain region, the mask dielectric layer arranged corresponding to the drain region comprises a plurality of mask subunits arranged in a separated manner so as to enable the drain region to be separated into a plurality of drain region subunits, and the drain region subunits are arranged in a mode being in one-to-one correspondence with the mask subunits. When high current hits a certain drain region subunit, the temperature of the hit drain regionsubunit rises, and the resistance is also increased accordingly, so that the ability of current circulation is reduced, the current is gradually dispersed to other drain region subunits adjacent to the drain region subunit, an effect of current sharing is played, and the electrostatic discharge resisting ability of the junction type field effect transistor is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a junction field effect transistor and a manufacturing method thereof. Background technique [0002] Electrostatic Discharge (Electrostatic Discharge) refers to the charge transfer caused by objects with different electrostatic potentials approaching or directly contacting each other. During electrostatic discharge, a large current will be generated in a short time, which will cause fatal damage to the integrated circuit, which is an important problem causing failure in the production and application of integrated circuits. For example, the human body model electrostatic discharge (HBM) usually occurs within a few hundred nanoseconds, and the maximum current peak may reach several amperes; while the electrostatic discharge of the machine model (MM) and charged device model (CDM) The time to occur is shorter and the current is greater. Such a large current passes through ...

AI Technical Summary

Problems solved by technology

[0004] However, for the application environment of high-voltage Junction Field-Effect Transistor (JFET), no external electrostatic discharge protection device or circuit is allowed to protect, and the traditional Junction Field-Effect Transistor’s ability to resist electrostatic discharge ESD is relatively weak

Images