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Light triggered thyristor with high di/dt tolerance

A light-controlled thyristor and endurance technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of limiting peak current capability di/dt endurance capability, limited application, etc., and achieve the effect of increasing the opening area and uniform current distribution

Active Publication Date: 2018-07-17
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

More importantly, the traditional circular layout photothyristor is opened by the central grating triggering the main cathode area in a limited area around it, which greatly limits its peak current capability and di / dt tolerance capability
These characteristics make the application of traditional LTT limited in the field of high power pulse

Method used

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  • Light triggered thyristor with high di/dt tolerance
  • Light triggered thyristor with high di/dt tolerance
  • Light triggered thyristor with high di/dt tolerance

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Embodiment

[0025] Taking the traditional 6000V withstand voltage and the multi-grating trigger and narrow cell photo-controlled thyristor provided by the present invention as an example, it intuitively demonstrates the performance advantages of the present invention compared with the traditional LTT in the field of pulse power applications. In order to verify the advantages of the multi-grating trigger and narrow cell photo-controlled thyristor provided by the present invention in the field of pulse power application, two devices are simulated by device simulation software Sentaurus. The cell width of the traditional device is 900 μm, and the unit cell width of the multi-grating triggered narrow cell LTT device provided by the present invention is 90 μm (the overall width is also 900 μm), which is one-tenth of the traditional one. For convenience of comparison, the traditional multi-grating trigger and the narrow cell light-controlled thyristor chip area provided by the present invention ...

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Abstract

The invention relates to the technology of semiconductors, and specifically relates to a light triggered thyristor with high di / dt tolerance. The light triggered thyristor is characterized in that theuniform distribution of internal current of the device and the temperature stability are optimized by reducing the cellular width and adjusting the structure of the device, and then the current resistant rise rate of the device is promoted. Moreover, due to the advantages of the light triggered thyristor, the territory can be adjusted within a light energy coverage range. The light triggered thyristor has the beneficial effects that the light triggered thyristor design of a narrow cellular structure with uniform current distribution and high temperature stability is provided, and the problemthat a traditional light triggered thyristor (LTT) is incapable of being applicable for the field of pulse power application due to the fact that the current resistant rise rate is low is solved. Thelight triggered thyristor is particularly applicable for high pulse power application, and is a light triggered thyristor with high peak current capacity and high current increase capacity.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a high di / dt tolerance light-controlled thyristor suitable for pulse power applications. Background technique [0002] Power semiconductor devices, as switching devices, can be applied in both the power electronics field and the pulse power field. In the field of power electronics, the traditional Light Triggered Thyristor (LTT for short) is widely used as a pulse discharge switching device due to its superior performance. In the field of power electronics applications, the development trend of photo-controlled thyristor device technology is to use cathode short-circuit structure to improve withstand voltage, and at the same time control the size and number of cathode short-circuit structures. At the same time, researchers also provide some new device structures and process technologies to achieve high current capacity and meet the requirements of pulse power application capabilities....

Claims

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Application Information

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IPC IPC(8): H01L31/111H01L31/0352
CPCH01L31/035272H01L31/1113
Inventor 陈万军邓操高吴昊夏云信亚杰左慧玲
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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