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Vertical structure roughening method

A vertical structure and roughening technology, applied in the direction of discharge tubes, electrical components, circuits, etc., to increase antistatic ability, reduce over-coarsening phenomenon, and inhibit KOH corrosion

Inactive Publication Date: 2018-08-03
ENRAYTEK OPTOELECTRONICS
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a vertical structure roughening method, using PECVD to treat the GaN surface to suppress KOH corrosion, so that the unit cell is less damaged, solve the problems of over-coarsening and uneven roughening, and improve chip performance

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Embodiment Construction

[0023] The present invention will be further elaborated below by describing a preferred specific embodiment in detail in conjunction with the accompanying drawings.

[0024] In order to solve the problem of excessive roughening or uneven roughening of the GaN surface in the prior art, the inventors of the present application proposed a new vertical structure roughening method after research. The vertical structure coarsening method will be described in detail below.

[0025] figure 2 It is a flow chart of a vertical structure coarsening method of the present invention, the method comprising:

[0026] Step S101, applying a plasma treatment process on the surface of the exposed GaN layer, and forming an oxide layer on the surface of the GaN layer;

[0027] Step S102, roughening the GaN layer.

[0028] Such as image 3 As shown, specifically, the above-mentioned GaN layer is an N-type GaN layer 104, and a conductive layer 101, a P-type GaN layer 102, and a light-emitting lay...

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Abstract

The invention discloses a vertical structure roughening method, which comprises the steps of: applying a plasma treatment process on the surface of an exposed GaN layer, and forming an oxidation layeron the surface of the GaN layer; and roughening the GaN layer. The plasma treatment process comprises the steps of introducing a certain amount of O2 to the surface of the GaN layer by adopting a plasma enhanced chemical vapor deposition method. The vertical structure roughening method utilizes PECVD to carry out surface treatment on GaN to suppress KOH corrosion, so as to make damage to unit cells small, solves the problems of over-roughening, uneven roughening and the like, and improves the performance of chips.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for roughening a vertical structure. Background technique [0002] After roughening the surface of GaN, it has the advantages of low VF, high luminous intensity, uniform luminous distribution, low power consumption, and long life, and is widely used in vertical and other structures. The treatment plan for the N-type GaN surface before roughening plays a key role in controlling the roughening efficiency and pros and cons. [0003] However, when roughening the GaN surface, the GaN surface is usually over-roughened or roughened unevenly, such as figure 1 As shown, the unit cells after over-roughening are sparse and bald, the morphology is poor, and the unit cells are severely damaged, thereby reducing the performance of the chip. Contents of the invention [0004] The purpose of the present invention is to provide a vertical structure roughening method, using PECVD to trea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L33/00H01L33/22
CPCH01J37/3266H01L33/0075H01L33/22
Inventor 单志远陈党盛王亚洲
Owner ENRAYTEK OPTOELECTRONICS