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A Method for Locating and Tracking Detected Defects During Wafer Manufacturing

A manufacturing process and defect technology, applied in the field of defect detection and tracking in the wafer manufacturing process, can solve problems such as low material quality, high defect density, and unclear value-added mechanism

Active Publication Date: 2021-05-11
江苏紫峰知识产权服务有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in wide bandgap semiconductors such as SiC, due to the incomplete research on material defects and low material quality, the defect density is high, the defect value-added mechanism is unclear, and the impact of defects on devices is not perfect.

Method used

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  • A Method for Locating and Tracking Detected Defects During Wafer Manufacturing
  • A Method for Locating and Tracking Detected Defects During Wafer Manufacturing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0029]S1, etching the pattern of defect positioning is etched on the wafer by photolithography, after cleaning and drying, the wafer defect scan image is obtained by the PL defect detection machine, wherein the etch mark is in the PL defect detection machine. As can be seen in the image, the graphic acts in positioning and alignment during subsequent processes, and the PL defect detection machine can automatically identify the tag during the scanning process, and alignment according to the tag;

[0030]S2, introduce the obtained wafer defect image into the wafer positioning grid coordinate system, and count the number, type, and distribution of defects in each grid according to the positioning grid;

[0031]S3, after all ion implantation processes are completed in the wafer, clean and dry, obtain wafer defective images by PL defect detection machine; introduce the obtained wafer defective image into the wafer grid coordinate system, will S2 and S3 The image partition is compared to the nu...

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Abstract

The invention discloses a positioning and tracking method for detecting defects in the wafer manufacturing process, which uses PL signals of different wavelengths to detect defects; forms visible direct marks on the wafer and aligns the marks to realize the detection of defects. The precise location of defects in the wafer can obtain the specific position of the defect or the range of the position where the defect is located. The problem of difficult location and tracking of detection defects in the wafer manufacturing process is solved.

Description

Technical field[0001]The present invention belongs to the field of H01L 21 / 336 semiconductor device, and more particularly to the positioning and tracking method of detecting defects during wafer manufacturing.Background technique[0002]During the preparation of semiconductor devices, the defective species of the epitaxial sheets and the process processing method of the process processing during the wafer manufacturing process have an important impact on the performance of the devices obtained. Effective tracking defects and positioning defects have important significance for the impact of defects themselves on device performance, and it is important for the determination of radio and reliability analysis.[0003]During the existing wafer manufacturing, only the epitaxial scan before the wafer process is performed, and the wafer defect scan image can be obtained, and the wafer defect scan image may show the defects of the wafer surface and the wafer surface. The morphology, the wafer p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 李明山倪炜江黄兴袁俊张敬伟
Owner 江苏紫峰知识产权服务有限公司