ESD protection diode-integrated shielding gate trench MOSFET device and manufacturing method thereof

Abstract

The invention provides an ESD protection diode-integrated shielding gate trench MOSFET device and a manufacturing method thereof. The device comprises a semiconductor substrate, an epitaxial layer positioned on the semiconductor substrate, a first trench, a second trench and a third trench formed in the epitaxial layer and arranged in sequence, a shielding electrode filled in the second trench andon the lower parts of the first trench and the third trench, an insulating isolation layer for coating the shielding electrode, a gate electrode and a gate dielectric layer for filling the upper partof the first trench, an ESD protection diode arranged on the upper part of the third trench, a body region positioned on the upper part of the epitaxial layer, a source region positioned on the bodyregion, and a drain region arranged below the semiconductor substrate, wherein source end metal is electrically connected with the source region, the body region, the shielding electrode and one end of the ESD protection diode; and the gate end metal is connected with the gate electrode and the other end of the ESD protection diode. The device is compact in structure and excellent in performance,and the realization method is simple, so that the electric leakage of the ESD protection diode can be lowered, and the anti-ESD impact capability of the MOSFET gate is improved.

Description

technical field [0001] The invention relates to the field of design and manufacture of semiconductor power devices, in particular to the device structure and manufacturing method of a shielded gate trench power MOSFET. Background technique [0002] In the field of medium and low voltage power MOSFETs, the performance of shielded gate trench power MOSFETs is significantly better than that of trench power MOSFETs and planar power MOSFETs, because the shielding electrode greatly reduces the gate-drain capacitance (Cgd), and because the shielding electrode acts as a The field plate (Field Plate) effect makes it possible to use a higher doping concentration to achieve the same device withstand voltage (BVDSS), thereby reducing the on-resistance (Rdson), that is, the shielded gate trench MOSFET device can simultaneously achieve low On-resistance (Rdson) and low gate-to-drain capacitance (Cgd). In general power transmission or conversion systems, low on-resistance (Rdson) means lo...

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Problems solved by technology

[0006] In view of the prior art described above, the object of the present invention is to provide a shielded gate trench MOSFET device with integr

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