A kind of power device and its preparation method
A technology of power devices and chips, which is applied in the field of power devices and their preparation, can solve problems such as product failure, and achieve the effect of improving heat dissipation efficiency
Active Publication Date: 2020-09-22
SHANGHAI XINLONG SEMICON TECH CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
These all lead to power devices to withstand more and more high temperatures or temperature drift during use. High temperatures have a great impact on the reliability and life of power devices, which in turn leads to premature failure of products
Method used
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[0029] Hereinafter, the present invention will be further described with reference to the drawings and specific implementations:
[0030] Such as Figure 1-2 As shown, a power device 1 disclosed in the present invention includes a chip 10, a substrate 30 arranged on opposite sides of the chip 10, and a heat dissipation component 20. The chip 10 includes an active area 15 in the middle and an active area 15 Isolation regions 11 on both sides. At least two trenches 12 are provided on the isolation region 11. The heat dissipation component 20 includes an oxide layer 22 formed on the inner wall of the trench 12 and a metal connecting the oxide layer 22 and the substrate 30 Layer 21.
[0031] In the above embodiment, the isolation region 11 on the chip 10 of the power device 1 is provided with at least two trenches 12, and the oxide layer 22 and the metal layer 21 with high heat dissipation efficiency are connected in the trenches 12. The layer 22 and the metal layer 21 can transfer t...
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The invention discloses a power device and a preparation method thereof. The power device comprises a chip, substrates and a radiating component, the substrates are arranged on two opposite surfaces of the chip, the chip comprises a middle active area and isolation areas positioned on two sides of the active area, at least two grooves are formed in the isolation areas, the radiating component comprises oxidation layers and metal layers, the oxidation layers are formed on the inner walls of the grooves, and the metal layer is connected with the oxidation layers and the substrates. The preparation method of the power device includes the steps: A providing the chip comprising a front surface and a back surface which are opposite, and etching the grooves in the isolation areas in the front surface of the chip; B filling the grooves in the front surface of the chip with the oxidation layers and the metal layers; C etching the grooves in the isolation areas in the back surface of the chip; Dfilling the grooves in the back surface of the chip with the oxidation layers and the metal layers; E packaging the front surface and the back surface of the chip. The radiating efficiency of the power device can be improved.
Description
Technical field [0001] The invention relates to the technical field of semiconductor chips, in particular to a power device and a preparation method thereof. Background technique [0002] Power devices are developing in the direction of modularization and intelligence. The emergence of large-scale and very large-scale integrated circuits has led to higher and higher integration of power devices, and the number and assembly density of various chips on the substrate are also increasing. To reduce the size of the power electronic module and further increase the power density, it is required that the power module has good electrothermal performance regardless of the steady state or transient conditions. All these have caused the power devices to withstand more and more high temperatures or temperature drifts during use. High temperatures have a great impact on the reliability and life of the power devices, leading to premature product failure. Summary of the invention [0003] In ord...
Claims
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IPC IPC(8): H01L23/367H01L23/373
CPCH01L23/367H01L23/373H01L23/3735
Inventor 何名江钟剑梅
Owner SHANGHAI XINLONG SEMICON TECH CO LTD