Light emitting diode epitaxial wafer and preparation method thereof
A technology of light-emitting diodes and epitaxial wafers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency of light-emitting diodes, achieve the effects of improving recombination efficiency, increasing recombination space, and improving luminous efficiency
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[0032] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0033] figure 1 It is a structural diagram of an epitaxial wafer of a light emitting diode provided by an embodiment of the present invention. Such as figure 1 As shown, the epitaxial wafer includes a substrate 1 and an N-type semiconductor 2 and a P-type semiconductor 3 sequentially arranged on the substrate 1. The interface A between the P-type semiconductor 3 and the N-type semiconductor 2 includes a plurality of surfaces perpendicular to the substrate. The recessed area a is recessed towards the substrate in the direction.
[0034] By setting multiple recessed regions on the interface between the P-type semiconductor and the N-type semiconductor, holes or electrons can enter the N-type semiconductor or P-type semiconductor more d...
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