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Light emitting diode epitaxial wafer and preparation method thereof

A technology of light-emitting diodes and epitaxial wafers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency of light-emitting diodes, achieve the effects of improving recombination efficiency, increasing recombination space, and improving luminous efficiency

Active Publication Date: 2018-08-24
HC SEMITEK ZHEJIANG CO LTD
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  • Abstract
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  • Claims
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Problems solved by technology

[0005] In order to solve the problem of low luminous efficiency of existing light-emitting diodes, an embodiment of the present invention provides an epitaxial wafer of a light-emitting diode and a preparation method thereof

Method used

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  • Light emitting diode epitaxial wafer and preparation method thereof
  • Light emitting diode epitaxial wafer and preparation method thereof
  • Light emitting diode epitaxial wafer and preparation method thereof

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Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0033] figure 1 It is a structural diagram of an epitaxial wafer of a light emitting diode provided by an embodiment of the present invention. Such as figure 1 As shown, the epitaxial wafer includes a substrate 1 and an N-type semiconductor 2 and a P-type semiconductor 3 sequentially arranged on the substrate 1. The interface A between the P-type semiconductor 3 and the N-type semiconductor 2 includes a plurality of surfaces perpendicular to the substrate. The recessed area a is recessed towards the substrate in the direction.

[0034] By setting multiple recessed regions on the interface between the P-type semiconductor and the N-type semiconductor, holes or electrons can enter the N-type semiconductor or P-type semiconductor more d...

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Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of manufacturing of photoelectrons. The light emitting diode epitaxial wafer comprises a substrate, and an N type semiconductor structure and a P type semiconductor structure which are stacked on the substrate in sequence. By setting multiple concave regions on the junction surface between a P type semiconductor and an N type semiconductor, holes or electrons can deeper enter the N type semiconductor or the P type semiconductor, thereby enlarging the hole and electron recombination space, improving the current carrier recombination efficiency and further improving the light emitting efficiency of the light emitting diode.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to an epitaxial wafer of a light-emitting diode and a preparation method thereof. Background technique [0002] As the basic structure for making light-emitting diodes, epitaxial wafers play a very important role in the process of making light-emitting diodes. Epitaxial wafer refers to the semiconductor film grown on the substrate, which includes P-type semiconductor and N-type semiconductor, and the space charge region formed at the interface between P-type semiconductor and N-type semiconductor is called PN junction. [0003] When a forward bias is applied to the PN junction in the epitaxial wafer, the holes of the P-type semiconductor and the electrons of the N-type semiconductor will recombine within a few microns near the PN junction, thus generating spontaneous emission fluorescence. [0004] The interface between the existing P-type semiconductor and N-type sem...

Claims

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Application Information

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IPC IPC(8): H01L33/24H01L33/00
CPCH01L33/0075H01L33/24
Inventor 林智远吴志浩张奕董彬忠魏柏林林凡王江波
Owner HC SEMITEK ZHEJIANG CO LTD
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