Magnetron sputtering cavity and magnetron sputtering device

A magnetron sputtering and chamber technology, applied in the field of magnetron sputtering, can solve the problems of poor film uniformity, cumbersome process, unsuitable for large-size wafer production, etc., and achieves good film thickness uniformity and improves uniformity. Effect

Active Publication Date: 2018-08-28
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] use figure 1 The magnetron sputtering chamber shown will have the following problems in practical application: the uniformity of the film after direct spu

Method used

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  • Magnetron sputtering cavity and magnetron sputtering device
  • Magnetron sputtering cavity and magnetron sputtering device
  • Magnetron sputtering cavity and magnetron sputtering device

Examples

Experimental program
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Example Embodiment

[0023] Example 1

[0024] figure 2 This is a schematic structural diagram of a magnetron sputtering chamber provided by an embodiment of the present invention; please refer to figure 2 , The magnetron sputtering chamber provided by the embodiment of the present invention includes a chamber body 1, a base 2 is provided in the chamber body 1, and a target material is provided in the chamber body 1 at a position directly opposite to the base 2 The target material position of 3; a magnetron 4 is set above the target material 3. The magnetron 4 includes an inner magnetic pole 41 and an outer magnetic pole 42 of opposite polarity, and a magnetic field track is formed between the inner magnetic pole 41 and the outer magnetic pole 42.

[0025] The upper surface of the base 2 for supporting the substrate is arranged obliquely. During the process (or when the substrate is on the base 2, it is used to make the thinner substrate area deposited on the substrate relative to the deposition thick...

Example Embodiment

[0037] Example 2

[0038] The embodiment of the present invention also provides a magnetron sputtering equipment, including a magnetron sputtering chamber, and the magnetron sputtering chamber adopts the magnetron sputtering chamber provided in the first embodiment of the present invention.

[0039] The magnetron sputtering equipment provided in the embodiment of the present invention includes the magnetron sputtering chamber provided in the above-mentioned embodiment 1 of the present invention, and therefore, an in-plane anisotropic magnetic film with good film thickness uniformity can be obtained.

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Abstract

The invention provides a magnetron sputtering cavity, comprising a base, wherein the upper surface of the base used for bearing a substrate is obliquely arranged, so when the base bears a substrate, asubstrate area with lower deposition thickness on the substrate is shorter in distance to the position of a target material compared with a substrate area with higher deposition thickness on the substrate. The invention also provides a magnetron sputtering device comprising the magnetron sputtering cavity. With the magnetron sputtering cavity and the magnetron sputtering device, a film with goodthickness uniformity can be obtained.

Description

technical field [0001] The invention belongs to the technical field of magnetron sputtering, and in particular relates to a magnetron sputtering chamber and magnetron sputtering equipment. Background technique [0002] figure 1 It is a structural schematic diagram of an existing magnetron sputtering chamber, such as figure 1 As shown, the magnetron sputtering chamber 1 is provided with a chuck 9 carrying a substrate 10, and a target 4 is arranged directly above the chuck 9, and a DC power supply will apply a bias voltage to the target during sputtering. 4. Make it a negative pressure relative to the grounded cavity, so that the argon gas discharges to generate plasma, and attracts the positively charged argon ions to the negatively biased target 4. When the energy of the argon ions is high enough, it will The metal atoms escape from the surface of the target and deposit on the substrate 10; a magnetron 5 is arranged directly above the target 4, which is immersed in deioniz...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/50
CPCC23C14/35C23C14/351C23C14/50
Inventor 张同文杨玉杰丁培军王厚工
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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