Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnetron sputtering cavity and magnetron sputtering device

A magnetron sputtering and chamber technology, applied in the field of magnetron sputtering, can solve the problems of poor film uniformity, cumbersome process, unsuitable for large-size wafer production, etc., and achieves good film thickness uniformity and improves uniformity. Effect

Active Publication Date: 2018-08-28
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF7 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] use figure 1 The magnetron sputtering chamber shown will have the following problems in practical application: the uniformity of the film after direct sputtering is poor, so that follow-up processing is required in the next process, the process is cumbersome, and it is not suitable for large-sized wafers production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetron sputtering cavity and magnetron sputtering device
  • Magnetron sputtering cavity and magnetron sputtering device
  • Magnetron sputtering cavity and magnetron sputtering device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] figure 2 The structural representation of the magnetron sputtering chamber that the embodiment of the present invention provides; Please refer to figure 2 , The magnetron sputtering chamber provided by the embodiment of the present invention includes a chamber body 1, and a base 2 is arranged in the chamber body 1; The target position of 3; a magnetron 4 is arranged above the target 3, and the magnetron 4 includes an inner magnetic pole 41 and an outer magnetic pole 42 of opposite polarity, and a magnetic field track is formed between the inner magnetic pole 41 and the outer magnetic pole 42.

[0025] The upper surface of the pedestal 2 for carrying the substrate is arranged obliquely, during the process (or in other words, when the substrate is on the pedestal 2, it is used to make the thinner substrate area on the substrate relative to the deposition thickness. Thicker substrate area and target position ( figure 2 The distance between the position where the targe...

Embodiment 2

[0038] The embodiment of the present invention also provides a magnetron sputtering device, including a magnetron sputtering chamber, and the magnetron sputtering chamber adopts the magnetron sputtering chamber provided in Embodiment 1 of the present invention.

[0039] The magnetron sputtering equipment provided by the embodiment of the present invention includes the magnetron sputtering chamber provided by the above-mentioned embodiment 1 of the present invention, therefore, an in-plane anisotropic magnetic film with better film thickness uniformity can be obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a magnetron sputtering cavity, comprising a base, wherein the upper surface of the base used for bearing a substrate is obliquely arranged, so when the base bears a substrate, asubstrate area with lower deposition thickness on the substrate is shorter in distance to the position of a target material compared with a substrate area with higher deposition thickness on the substrate. The invention also provides a magnetron sputtering device comprising the magnetron sputtering cavity. With the magnetron sputtering cavity and the magnetron sputtering device, a film with goodthickness uniformity can be obtained.

Description

technical field [0001] The invention belongs to the technical field of magnetron sputtering, and in particular relates to a magnetron sputtering chamber and magnetron sputtering equipment. Background technique [0002] figure 1 It is a structural schematic diagram of an existing magnetron sputtering chamber, such as figure 1 As shown, the magnetron sputtering chamber 1 is provided with a chuck 9 carrying a substrate 10, and a target 4 is arranged directly above the chuck 9, and a DC power supply will apply a bias voltage to the target during sputtering. 4. Make it a negative pressure relative to the grounded cavity, so that the argon gas discharges to generate plasma, and attracts the positively charged argon ions to the negatively biased target 4. When the energy of the argon ions is high enough, it will The metal atoms escape from the surface of the target and deposit on the substrate 10; a magnetron 5 is arranged directly above the target 4, which is immersed in deioniz...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/50
CPCC23C14/35C23C14/351C23C14/50
Inventor 张同文杨玉杰丁培军王厚工
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com