Random access memory and preparation method thereof

A technology of random access memory and storage unit, applied in the field of memory, can solve the problem of limited area of ​​storage unit density, and achieve the effect of increasing storage density and reducing the plane area

Inactive Publication Date: 2018-08-28
CETHIK GRP
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  • Application Information

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Problems solved by technology

[0005] The main purpose of the present invention is to provide a random access memory and its preparation method, to solve the prob

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  • Random access memory and preparation method thereof
  • Random access memory and preparation method thereof

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[0045] It should be noted that the embodiments of the present invention and the features in the embodiments can be combined with each other if there is no conflict. Hereinafter, the present invention will be described in detail with reference to the drawings and in conjunction with the embodiments.

[0046] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is a part of the embodiments of the present invention, not all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0047] It should be noted that the terms "fir...

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Abstract

The invention provides a random access memory and a preparation method thereof. The random access memory comprises an integrated module arranged on an insulation bottom layer. The integrated module comprises a first conductor layer, a three-dimensional CMOS unit layer, a memory unit layer and a second conductor layer, which are stacked up and connected in sequence. The three-dimensional CMOS unitlayer comprises one or more three-dimensional CMOS units. The three-dimensional CMOS unit layer also comprises a grid electrode layer having at least one through hole; and at least one active region,which passes through the through hole in a one-to-one correspondence manner and is connected with the grid electrode layer, the memory unit layer and the first conductor layer. The active region comprises a source region and a drain region. The source region and the drain region are arranged at the two sides of the grid electrode layer respectively. Compared with a plane CMOS unit, the source anddrain electrodes of which are arranged at the left and right sides of the grid electrode, in the prior art, for a memory that requires the CMOS to provide an effective drive current to supply to the memory unit, the device with the same channel width reduces plane area of the CMOS unit, thereby improving storage density of the random access memory.

Description

technical field [0001] The present invention relates to the technical field of memory, in particular to a random access memory and a preparation method thereof. Background technique [0002] At present, in order to increase the density of random access memory (RAM) such as STT MRAM, the method of reducing the planar area of ​​the storage unit is usually used. However, in order to reduce the planar area of ​​the storage unit, the process node needs to be continuously improved, which poses challenges to the cost and process. [0003] Moreover, the existing random access memory usually consists of a MOS transistor, a storage unit and several connection lines. The MOS transistor plays the role of address selection. The drain of the MOS transistor is connected to one end of the storage unit. When the gate is turned on, the source, The drain, the storage unit and the bit line form a loop, and when the random access memory is an STT MRAM, the storage unit is a magnetic tunnel junct...

Claims

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Application Information

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IPC IPC(8): H01L27/22H01L27/092H01L29/08H01L21/8238
CPCH01L27/092H01L29/0847H01L21/823814H10B61/22
Inventor 戴强孟皓李辉辉陆宇刘少鹏杨成成刘波
Owner CETHIK GRP
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