Preparation method of aluminum nitride raw ceramic sheet for high temperature co-fired ceramic

Abstract

The invention discloses a preparation method of an aluminum nitride raw ceramic sheet for high temperature co-fired ceramic. The preparation method comprises the following steps: 1) loading a grindingball; 2) disposing slurry; 3) performing primary grinding; 4) configuring casting slurry; 5) performing secondary grinding; 6) performing vacuum defoaming; 7) casting, wherein the casting slurry subjected to vacuum defoaming is transferred to a casting machine for casting operation, and the thickness of a green tape is controlled within a range of 0.05 to 1 mm; and 8) cutting. The raw material does not contain toxic components such as benzene, ketone and aldehyde, and organic toxic and harmful substances and waste liquid are not generated in the production process, thereby reducing environmental pollution. The raw ceramic sheet produced by the method has high strength, good thermal conductivity and uniform density, and is less prone to deformation, high in punching printing precision andgood in flatness and has good shrinkage matching with metallized slurry in the production process of high temperature co-fired ceramics. The film coating operation is not needed in the production process, the problems of softness, difficult processing, high probability of offset filling printing and lamination misalignment and the like are solved, and the production efficiency is improved while the production cost is lowered.

Description

technical field

[0001] The invention relates to the technical field of microelectronic ceramic materials, in particular to a method for preparing aluminum nitride green ceramic sheets for high-temperature co-fired ceramics. Background technique

[0002] Aluminum nitride ceramics have the characteristics of good thermal conductivity, high mechanical strength, good electrical insulation and non-toxicity. At present, they are widely used in many high-tech fields and are a kind of ceramic material that has developed rapidly in recent years. Because of its small dielectric constant, better matching with the expansion coefficient of chip materials, and easy realization of multi-layer wiring, it has broad application prospects in the fields of microelectronics, optoelectronics, power electronics and high-power electronic packaging, and gradually began to replace beryllium oxide. , alumina and other traditional ceramic materials. With the continuous expansion of the application fie...