Backside passivated crystalline silicon cell sheet backside laser grooving structure

Abstract

The invention discloses a backside passivated crystalline silicon cell sheet backside laser grooving structure, comprising a cell piece, wherein the cell piece comprises a laser grooving line and a laser non-grooving area; the cell piece is provided with a plurality of hollows; an electrode is disposed in the hollow; the electrode is provided with centipede feet; the laser grooving line is parallel to the hollow and does not contact the hollow; the distance from the left and right ends of the hollow to the adjacent nearest laser grooving line is 0.2 mm-1.5 mm; and the distance from the upper and lower ends of the hollow to the adjacent nearest laser grooving line is 0.2mm-1.5mm. According to the backside passivated crystalline silicon cell sheet backside laser grooving structure provided by the invention, the attenuation power and the number of hidden cracks of the battery component can be effectively reduced within a limited range of the distance between the hollow of the electrode and the adjacent nearest laser grooving line, and the mechanical load capacity of the backside passivated crystalline silicon cell is improved.

Description

technical field [0001] The invention relates to the technical field of crystalline silicon cells, in particular to a rear passivated crystalline silicon cell backside laser groove structure. Background technique [0002] With the continuous development of crystalline silicon technology, the expansion of solar cell production scale and the continuous reduction of cell prices, reducing production costs and improving efficiency are the focus of cell technology development. At present, the back passivation battery is widely used because of its obvious efficiency improvement compared with the conventional battery. In the existing production process of the battery sheet, a thin layer of aluminum oxide and a SiNx layer are coated on the back to reduce the number of carrier recombination on the back and improve the open circuit. Voltage; then through laser slotting, the silicon substrate at the slotting place is exposed, and printing makes the aluminum paste contact with the silicon...

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Problems solved by technology

[0005] However, there are still obvious defects in the above structure: the laser slotting line has been slotted all the way to the hollow, and there are many endpoints near the hollow where the back electrode is located, resulting in heavy laser slots around the hollow, and the main hidden cracks of the battery are found by observation. Occurs at the position where the electrode is hollowed out, and the above structure still cannot effectively improve this phenomenon

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