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Outage storage type SIMON encryption circuit

An encryption circuit and storage-type technology, which is applied to encryption devices with shift registers/memory, protection of storage content from loss, electrical components, etc., can solve the problem that MOS tubes do not have non-volatility, data cannot be saved, data loss etc.

Active Publication Date: 2018-09-11
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the traditional SIMON encryption circuit, the shift register, serial-to-parallel circuit, column mixing module and round encryption module are all designed based on MOS tubes, and the MOS tube itself is not non-volatile. Therefore, the SIMON encryption circuit is running If there is a sudden power failure during the process, the data in it will not be saved, and some important data will be lost

Method used

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  • Outage storage type SIMON encryption circuit
  • Outage storage type SIMON encryption circuit
  • Outage storage type SIMON encryption circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Embodiment one: if Figure 1 to Figure 7As shown, a power-off storage type SIMON encryption circuit includes two n-bit shift registers, two n-bit serial-to-parallel circuits and an n-bit memristor-based ciphertext generation circuit, n is an integer greater than or equal to 1 , the output end of the first n-bit shift register is connected to the input end of the first n-bit serial-to-parallel circuit, the output end of the second n-bit shift register is connected to the input of the second n-bit serial-to-parallel circuit terminal connection, each bit based on the memristor-based ciphertext generation circuit includes a column mixing module, a first waveform adjustment module, a round key encryption module and a second waveform adjustment module; the column mixing module includes the first and second input AND gate A1, the second The one-two-input AND gate A1 includes a first memristor M1 and a second memristor, the input end of the first memristor M1 is the first input...

Embodiment 2

[0025] Embodiment 2: This embodiment is basically the same as Embodiment 1, the difference is only in this embodiment, such as Figure 8 As shown, each n-bit shift register includes n first D flip-flops with the same structure, the first D flip-flop has a setting terminal, a clock terminal, an input terminal and an output terminal, and the setting of the n first D flip-flops The bit end is connected and its connection end is the setting end of n-bit shift register, the clock end of n first D flip-flops is connected and its connection end is the clock end of n-bit shift register, the first first D flip-flop The input terminal of the device is the input terminal of the n-bit shift register, the output terminal of the m first D flip-flop is connected with the input terminal of the m+1 first D flip-flop, m=1, 2,..., n -1, the output terminal of the nth first D flip-flop is the output terminal of the n-bit shift register.

[0026] Such as Figure 9 As shown, each n-bit serial-to-...

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Abstract

The invention discloses an outage storage type SIMON encryption circuit comprising two n-digit shifting registers, two n-digit serial-to-parallel circuits and an n-digit ciphertext generation circuitbased on memristors. Each digit of ciphertext generation circuit based on the memristors comprises a column mixing module, a first waveform adjustment module, a round key encryption module and a second waveform adjustment module, wherein the column mixing module comprises a first two-input AND gate that comprises a first memristor and a second memristor; the first waveform adjustment module comprises a first phase inverter and a second phase inverter; the round key encryption module comprises three two-input XOR gates having the same structure; each two-input XOR gate comprises a third phase inverter, a fourth phase inverter, a two-input OR gate, a second two-input AND gate and a third two-input AND gate; the two-input OR gate comprises a third memristor and a fourth memristor; and the second waveform adjustment module comprises a fifth phase inverter and a sixth phase inverter. The circuit provided by the invention has the advantages that when in outage, the data can be automaticallystored, and the data loss is avoided.

Description

technical field [0001] The invention relates to a SIMON encryption circuit, in particular to a power-off storage type SIMON encryption circuit. Background technique [0002] SIMON was proposed by the National Security Agency (NSA) of the United States in 2013. It belongs to a series of highly optimized block ciphers and can provide excellent performance in a hardware environment. The traditional SIMON encryption circuit adopts CMOS design technology, mainly including shift register, serial-to-parallel circuit, column mixing module and round encryption module. When the traditional SIMON encryption circuit is working, the plaintext is sequentially input into the shift register for shifting, and then converted into parallel data through the serial-to-parallel circuit, and the parallel data is sequentially processed and rounded by the column mixing module. The encryption module obtains the ciphertext after performing the round encryption operation. In the traditional SIMON enc...

Claims

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Application Information

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IPC IPC(8): H04L9/06G06F12/16
CPCG06F12/16H04L9/0618
Inventor 张会红陈鑫辉张跃军
Owner NINGBO UNIV
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