Light-emitting diode and method for manufacturing same
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high brightness of light-emitting diode displays, and achieve the effects of improving operational stability and efficiency and enhancing current density
Inactive Publication Date: 2018-09-14
MIKRO MESA TECH
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Otherwise, the brightness of the LED display will be too large
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[0021] A number of implementations of the present invention will be disclosed below with the accompanying drawings. For the sake of clarity, many practical details will be described together in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some well-known and commonly used structures and elements will be shown in a simple and schematic manner in the drawings. Also, the same reference numerals in different drawings may be considered as corresponding elements unless otherwise indicated. These figures are drawn to clearly express the connection relationship between the components in the embodiments, and do not show the actual size of the components.
[0022] Figure 1A A cross-sectional view of a light emitting diode (LED) 100A according to a f...
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The invention discloses a light-emitting diode and a method for manufacturing the same. The method includes a plurality of steps as follows. A first type semiconductor layer is formed. A second type semiconductor layer is formed on the first type semiconductor layer. An impurity is implanted into a first portion of the second type semiconductor layer. The concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, suchthat the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer. The combination of the second portion and the first portion can limit entrance of the current to a region of an active layer between the first semiconductor layer and the second semiconductor layer, and increase the density of the current in a light-emitting region of the active layer so that the operation stability and efficiency of the light-emitting diode can be improved.
Description
technical field [0001] The invention relates to a light emitting diode and a manufacturing method thereof. Background technique [0002] In recent years, light-emitting diodes (LEDs) have been commonly used in general and commercial lighting applications. As a light source, light-emitting diodes have many advantages, including low energy consumption, long life, small size and fast switching speed, so traditional lighting sources, such as incandescent lamps, have been gradually replaced by light-emitting diode light sources . In light-emitting diodes, when electrons and holes recombine across the semiconductor band gap in the active layer, the recombination energy is emitted in the form of photons and generates light. This recombination mechanism is the so-called radiative recombination. [0003] In an LED display using a large number of LED arrays, in order to provide an appropriate brightness, eg, 500 nits (nit) to 3000 nits, the emitted energy of each LED must be precis...
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IPC IPC(8): H01L33/14H01L33/00
CPCH01L33/005H01L33/14
Inventor 陈立宜张珮瑜李欣薇张俊仪林师勤
Owner MIKRO MESA TECH