Check patentability & draft patents in minutes with Patsnap Eureka AI!

Enclosed structure, its manufacturing method and device

A technology of closed structure and manufacturing method, which is applied in the direction of microstructure technology, electric solid-state devices, semiconductor devices, etc., can solve the problems of poor reliability and achieve the effect of high reliability

Active Publication Date: 2019-12-31
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The main purpose of this application is to provide a closed structure, its manufacturing method and device, to solve the problem of poor reliability of the closed technology at high temperature in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Enclosed structure, its manufacturing method and device
  • Enclosed structure, its manufacturing method and device
  • Enclosed structure, its manufacturing method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0073] The formation process of the closed structure includes:

[0074] Provide a first base body 11, etch the first base body 11, form a groove and a medium filling groove 13 in the first base body 11, the groove is the first to-be-packaged part 12, such as figure 1 shown;

[0075] Provide a second base body 21, etch the second base body 21, and form a through hole in the second base body 21, the through hole is the second to-be-packaged part 22, as figure 2 As shown, the aperture of the above-mentioned through hole is the same as the width of the opening of the above-mentioned groove;

[0076] Deposit the first metal copper in the above-mentioned first to-be-packaged part 12 to form figure 1 The first metal portion 30 shown, meanwhile, the second metal copper is deposited in the above-mentioned second to-be-packaged portion 22 to form figure 2 the second metal part 40 shown;

[0077] The second substrate 20 is arranged on the first substrate 10 by bonding, and the si...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a closed structure, a manufacturing method thereof and a device. The manufacturing method includes the steps that a pre-closed structure is formed, wherein the pre-closed structure includes a first substrate and a second substrate, the first substrate is provided with a first to-be-packaged part and dielectric filling grooves, the second substrate is provided with a second to-be-packaged part, first gaps are formed between the groove walls of the medium filling grooves and the second substrate in a first direction, a second gap is formed between the sidewall of the firstto-be-packaged part and the sidewall of the second to-be-packaged part in the first direction, a containing space is formed between the first to-be-packaged part and the second to-be-packaged part, the pre-closed structure further comprises at least two metal parts, and at least parts of the metal parts are located in the containing space; the pre-closed structure is heated, so that at least twokinds of metal in the metal parts undergo an eutectic reaction to form an eutectic part, the eutectic part closes the second gap to form the closed structure, and the melting point of the eutectic part is higher than that of any metal in the eutectic reaction. The closed structure formed by the manufacturing method has high reliability.

Description

technical field [0001] The present application relates to the field of microfabrication, in particular, to a closed structure, its manufacturing method and device. Background technique [0002] With the development of micro-electromechanical systems (MEMS) technology, technologies and devices based on micro-channel radiators, micro-channel biochips, and microfluidics are becoming more and more widely used. In order to seal the flowing medium filled in the micro-channels in the micro-channels, certain sealing schemes and technologies are required to realize it. [0003] Traditional sealing generally adopts vacuum brazing, diffusion welding or wax sealing. If the device works in a high-temperature or high-pressure environment, the reliability of the two methods of diffusion welding and vacuum brazing is poor, and leakage or overflow is prone to occur. problems, and then cause the failure of the device, and the process of these two methods is complicated; the wax seal method i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/00B81C1/00
CPCB81B7/0032B81C1/00261B81C1/00269
Inventor 焦斌斌孔延梅云世昌叶雨欣陈大鹏
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More