Unlock instant, AI-driven research and patent intelligence for your innovation.

Low Voltage Bandgap Reference Circuit

A reference circuit, low-voltage technology, applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., can solve the problems of expensive die area, equipment and test time

Active Publication Date: 2020-07-10
SEMICON COMPONENTS IND LLC
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such low voltage references have a much higher spread due to manufacturing variations and require fine tuning to obtain the desired accuracy
Trimming is expensive in terms of die area, equipment and test time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low Voltage Bandgap Reference Circuit
  • Low Voltage Bandgap Reference Circuit
  • Low Voltage Bandgap Reference Circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Embodiment 1: A low voltage bandgap reference circuit includes a current source providing a reference voltage rail. The circuit also includes a Vbe loop branch coupled to the reference voltage rail to obtain a Vbe voltage with a negative temperature coefficient. The circuit also includes a ΔVbe loop branch to obtain a ΔVbe voltage, the ΔVbe loop branch employing a fractional Vbe voltage to provide a reduced positive temperature coefficient. The circuit also includes a feedback amplifier that sets the same voltage on the input of the amplifier as the loop branch to regulate the output voltage of the circuit on the reference voltage rail at a temperature compensated value below 1.2V.

Embodiment 2

[0048] Embodiment 2: An integrated circuit device includes a package and pins coupled to the package. The device also includes a low voltage bandgap reference circuit housed by the package, the low voltage bandgap reference circuit including a Vbe return branch coupled to the reference voltage rail to obtain a Vbe voltage having a negative temperature coefficient. The circuit also includes a ΔVbe loop branch to obtain a ΔVbe voltage, the ΔVbe loop branch employing a fractional Vbe voltage to provide a reduced positive temperature coefficient. The circuit also includes a feedback amplifier that sets the same voltage on the input of the amplifier as the loop branch to regulate the output voltage of the circuit on the reference voltage rail at a temperature compensated value below 1.2V.

Embodiment 3

[0049] Embodiment 3: A semiconductor device includes a semiconductor wafer and circuits formed in or on the wafer. Each circuit includes a Vbe return branch coupled to a reference voltage rail to obtain a Vbe voltage with a negative temperature coefficient. Each circuit also includes a ΔVbe loop branch to obtain a ΔVbe voltage, the ΔVbe loop branch employing a fractional Vbe voltage to provide a reduced positive temperature coefficient. Each circuit also includes a feedback amplifier that sets the same voltage on the input of the amplifier as the loop branch to regulate the output voltage of the circuit on the reference voltage rail at a temperature compensated value below 1.2V.

[0050] The following features may be incorporated into the various embodiments described above, either alone or in combination with one or more of the other features. The output voltage is regulated on the reference rail without trimming at temperature compensated values ​​below 1.2V. The output vo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a low-voltage bandgap reference circuit, which includes a current source providing a reference voltage rail. The circuit also includes a Vbe loop branch coupled to the reference voltage rail to obtain a Vbe voltage having a negative temperature coefficient. The circuit also includes a ΔVbe loop branch to obtain a ΔVbe voltage, the ΔVbe loop branch employing a fractional Vbe voltage to provide a reduced positive temperature coefficient. The circuit also includes a feedback amplifier that sets the same voltage on the input of the amplifier A as the loop branch to regulate the voltage on the reference voltage rail at a temperature compensated value below 1.2V. output voltage of the circuit.

Description

technical field [0001] The present disclosure relates generally to electronics and, more particularly, to regulated, temperature compensated voltage references. Background technique [0002] A voltage reference is usually provided by an electronic circuit that outputs a constant voltage regardless of changes in temperature or power supply that may normally or otherwise cause the voltage to fluctuate. Therefore, the desired behavior is that the voltage reference remains constant even when conditions in the system change. Such voltage references are used in power supply regulators, analog-to-digital converters, digital-to-analog converters, etc., as well as many other measurement and control systems. [0003] Almost all integrated circuit devices require a precise voltage reference. One implementation is known as a Brokaw voltage reference, which typically provides a voltage reference between 1.2V and 1.3V (ie, about 1.25V), and thus requires a slightly higher input voltage ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/567
CPCG05F1/567G05F1/468G05F1/575G05F3/30
Inventor P·卡丹卡
Owner SEMICON COMPONENTS IND LLC