Phase change memory and method for forming phase change memory

Abstract

The present invention provides a phase change memory and a method for forming the phase change memory. The method comprises a step of providing a substrate, a step of forming a heating layer on the substrate, a step of forming a phase change layer on a sidewall surface of the heating layer, wherein only a sidewall of the heating layer only is in contact with the phase change layer. The phase change layer is formed on the sidewall surface of the heating layer, and since the thickness of the heating layer can be made smaller in the forming process of the heating layer, the size is smaller than aminimum size of the surface of the heating layer. Since the thickness of the heating layer is small and the phase change layer is located on the sidewall surface of the heating layer, the contact area of the phase change layer and the heating layer can be small. The contact area of the phase change layer and the heating layer is small, the phase change layer material which undergoes a phase change in reading and writing data is few, thus the phase change time can be shortened, and the reading and writing speeds of the phase change memory are increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a phase-change memory and a forming method thereof. Background technique [0002] With the development of information technology, the amount of stored information has increased dramatically. The increase in the amount of stored information has promoted the rapid development of phase change memory, and at the same time put forward higher requirements for the read and write efficiency of phase change memory. [0003] Phase change memory (PCM), abbreviated as PCM, is a storage device that stores data by using the difference in conductivity of special materials when they transform between crystalline and amorphous states. [0004] The basic structure of a memory cell of a PCM includes a phase change layer. The phase change layer material is a very small chalcogenide alloy, which can quickly change from an ordered crystalline state to a disordered amorphous state...

AI Technical Summary

Problems solved by technology

[0005] However, the existing phase change memory has the disadvantages of slow reading and writing speed and low reading and writing efficiency.

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