Method for Determining Wafer Bowness and Scanning Equipment
A determination method and technology of bending degree, applied in the determination method of wafer bending degree and the field of scanning equipment, can solve problems such as wafer damage, increase measurement time, reduce production efficiency, etc., and achieve the effect of determining wafer bending degree
Active Publication Date: 2021-01-22
淮安西德工业设计有限公司
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, in actual implementation, since the wafer needs to be turned over for at least two measurements, it is easy to cause damage to the wafer and increase the measurement time, especially when the number of BOW value measurement equipment is limited, it is easy to reduce production efficiency
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0022] In the prior art, the wafer bow BOW is usually used to evaluate the degree of the concave or convex of the wafer. In the existing BOW calculation method, it is easy to cause damage to the wafer and increase the measurement time, especially when the number of BOW value measurement equipment is limited, it is easy to reduce the production efficiency.
[0023] Figure 1 to Figure 3 It is a schematic diagram of a working scene of a method for determining wafer curvature in the prior art.
[0024] refer to figure 1 , setting the wafer 130 on the measurement base 100 , and measuring the distance D1 between the center point of the front surface of the wafer 130 and the preset measurement plane 120 .
[0025] Wherein, the measurement base 100 may have a support portion for supporting the wafer 130 .
[0026] refer to figure 2 , the wafer 130 is turned over and placed on the measurement base 100 , and the distance D2 between the central point of the back surface of the wafe...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a method for determining the curvature of a wafer and scanning equipment. The method for determining the curvature of the wafer comprises the steps of determining a horizontalincluded angle between the surface of a wafer base and a horizontal plane; providing the wafer and arranging the wafer on the surface of the wafer base; measuring the distance between a center point of the wafer and a preset measurement plane and labelling the distance as a first distance, wherein the preset measurement plane is parallel to the horizontal plane; measuring the distance between an edge point of the wafer and the preset measurement plane and labelling the distance as a second distance, wherein the edge point is located on the edge of the wafer; and determining the curvature of the wafer according to the first distance, the second distance and the horizontal included angle. According to the method, flipping of the wafer can be avoided when the curvature of the wafer is measured, reduction of the measurement duration is facilitated and the production efficiency is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for determining the curvature of a wafer and a scanning device. Background technique [0002] In the existing manufacturing technology of semiconductor devices, it is easy to have the phenomenon of overall depression or protrusion on the surface of the wafer, which leads to the degradation of the quality of the wafer in the subsequent process, such as affecting the bonding (Bonding) process and so on. Bending of Wafer (BOW) is usually used to evaluate the degree of concave or convex of a wafer. [0003] In the existing BOW calculation method, it is necessary to use a special BOW value measuring device to measure the distance D1 between the center point of the front of the wafer and the preset position, and then flip the wafer to measure the distance between the center point of the back of the wafer and the preset position. The distance D2 between the...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L21/67G01B11/24G01B17/06
CPCG01B11/24G01B17/06H01L21/67288H01L22/12H01L22/20
Inventor 张杰真刘命江黄仁德
Owner 淮安西德工业设计有限公司