ESD protection device with bidirectional diode--string-triggered SCR structure

Abstract

The invention, which belongs to the field of electrostatic discharge protection of integrated circuits, provides an ESD protection device with a bidirectional diode-string-triggered SCR structure. TheESD protection device comprises a diode string formed by a segmentation well technology, a bidirectional SCR structure, and a metal wire. A deep N well is arranged in a P substrate; a first P well, afirst N well, a second P well, and a second N well are formed in the surface region of the deep N well successive from left to right; and a P+ injection region and an N+ injection region are set in each well. P wells are inserted at intervals by using a mask preparation template in a second N well region; each P well is separated by an N well; and one pair of P+ injection region and N+ injectionregion is arranged in each P well. The metal wire is connected to the injection regions; and a positive electrode and a negative electrode are led out from the metal wire to realize forward conductionand reverse conduction. According to the invention, the trigger voltage is controlled by increasing or decreasing the number of diodes formed by well segmentation, so that the ESD protection device is applied in the low voltage field widely.

Description

technical field [0001] The invention belongs to the field of electrostatic discharge protection of integrated circuits, and in particular relates to an ESD protection device with a bidirectional diode string triggering SCR structure, which can be used to improve the ESD protection reliability of on-chip ICs. Background technique [0002] With the wide application of integrated circuits (ICs) and the decreasing feature size of integrated manufacturing processes, the operating voltage of IC products is gradually reduced, and the electrostatic discharge (ESD) protection of on-chip ICs is facing greater challenges. Especially with the rapid development of radio frequency circuits, the ESD protection of low-voltage and radio frequency ICs, in terms of low trigger voltage, small parasitic capacitance and strong ESD robustness, all put forward strict ESD protection for the ESD protection design of on-chip ICs need. Traditional ESD protection solutions such as MOS tubes and diodes ...

AI Technical Summary

Problems solved by technology

Traditional ESD protection solutions such as MOS tubes and diodes are difficult to adapt to the current development trend of ESD protection for electronic products, especially RF ICs, due to factors such as large capacitance parasitic effects or high trigger voltages.

[0003] Existing diode-triggered SCR ESD protection schemes have problems such as inconvenient adjustment of trigger voltage, large layout area, low ESD robustness per unit area, and one-way protection of ESD pulses. protection applications, subject to certain restrictions

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