ESD protection device with bidirectional diode--string-triggered SCR structure

A technology of ESD protection and bidirectional diodes, which is applied in the direction of diodes, electric solid-state devices, semiconductor devices, etc., can solve the problems of low ESD robustness, one-way protection of ESD pulses, and inconvenient adjustment of trigger voltage, so as to improve ESD robustness performance, to achieve the effect of two-way ESD protection

Active Publication Date: 2018-10-23
JIANGNAN UNIV
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  • Abstract
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Problems solved by technology

Traditional ESD protection solutions such as MOS tubes and diodes are difficult to adapt to the current development trend of ESD protection for electronic products, especially RF ICs, due to factors such as large capacitance parasitic effects or high trigger voltages...

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  • ESD protection device with bidirectional diode--string-triggered SCR structure
  • ESD protection device with bidirectional diode--string-triggered SCR structure
  • ESD protection device with bidirectional diode--string-triggered SCR structure

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Embodiment Construction

[0025] The specific implementation manners of the present invention will be further described below in conjunction with the drawings and technical solutions.

[0026]An ESD protection device with a bidirectional diode string triggering SCR structure, which includes a diode string formed by split well technology and a bidirectional SCR structure, combined with a special metal wiring method to flexibly control the trigger voltage and maintenance voltage of the device, and improve the ESD of the device Robustness, realize bidirectional ESD protection, mainly including P substrate 101, deep N well 102, first P well 103, first N well 104, second P well 105, second N well 106, first P+ implant Region 113, first N+ implant region 114, second P+ implant region 115, second N+ implant region 116, third P+ implant region 117, third N+ implant region 118, fourth P+ implant region 119 and fourth N+ implant region The bi-directional SCR structure and diode string composed of 12 0, the main ...

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Abstract

The invention, which belongs to the field of electrostatic discharge protection of integrated circuits, provides an ESD protection device with a bidirectional diode-string-triggered SCR structure. TheESD protection device comprises a diode string formed by a segmentation well technology, a bidirectional SCR structure, and a metal wire. A deep N well is arranged in a P substrate; a first P well, afirst N well, a second P well, and a second N well are formed in the surface region of the deep N well successive from left to right; and a P+ injection region and an N+ injection region are set in each well. P wells are inserted at intervals by using a mask preparation template in a second N well region; each P well is separated by an N well; and one pair of P+ injection region and N+ injectionregion is arranged in each P well. The metal wire is connected to the injection regions; and a positive electrode and a negative electrode are led out from the metal wire to realize forward conductionand reverse conduction. According to the invention, the trigger voltage is controlled by increasing or decreasing the number of diodes formed by well segmentation, so that the ESD protection device is applied in the low voltage field widely.

Description

technical field [0001] The invention belongs to the field of electrostatic discharge protection of integrated circuits, and in particular relates to an ESD protection device with a bidirectional diode string triggering SCR structure, which can be used to improve the ESD protection reliability of on-chip ICs. Background technique [0002] With the wide application of integrated circuits (ICs) and the decreasing feature size of integrated manufacturing processes, the operating voltage of IC products is gradually reduced, and the electrostatic discharge (ESD) protection of on-chip ICs is facing greater challenges. Especially with the rapid development of radio frequency circuits, the ESD protection of low-voltage and radio frequency ICs, in terms of low trigger voltage, small parasitic capacitance and strong ESD robustness, all put forward strict ESD protection for the ESD protection design of on-chip ICs need. Traditional ESD protection solutions such as MOS tubes and diodes ...

Claims

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Application Information

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IPC IPC(8): H01L27/02
CPCH01L27/0255H01L27/0262
Inventor 梁海莲许强顾晓峰
Owner JIANGNAN UNIV
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