High-voltage semiconductor device and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as increased leakage current and reduced breakdown voltage, and achieve the effect of reducing leakage current and increasing spacing
Active Publication Date: 2021-09-28
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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However, the breakdown voltage of DDDMOS will decrease and the leakage current will increase
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[0035] A high-voltage semiconductor device and a manufacturing method thereof according to an embodiment of the present invention will be described below. However, it can be easily understood that the embodiments provided in the present invention are only used to illustrate the making and use of the present invention in a specific way, and are not intended to limit the scope of the present invention.
[0036] Embodiments of the present invention provide a high-voltage semiconductor device, such as a double-diffused-drain metal-oxide-semiconductor transistor (DDDMOS), which utilizes a gate dielectric layer having a U-shaped or ring-shaped structure to increase the breakdown voltage of the high-voltage semiconductor device . In this way, when the distance between the channel region and the drain is increased and the size of the high-voltage semiconductor device is reduced to improve its on-resistance and reduce leakage current, the high-voltage semiconductor device can still hav...
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The invention provides a high-voltage semiconductor device and a manufacturing method thereof. The device includes a semiconductor substrate with a high voltage well. The device also includes a gate dielectric structure and a gate. The gate dielectric structure includes a first dielectric layer on the high voltage well region and a second dielectric layer on the first dielectric layer. The second dielectric layer has a U-shaped or ring-shaped plan view profile to form an opening exposing the first dielectric layer. The gate is located on the second dielectric layer and extends to the exposed first dielectric layer through the opening. The device also includes a drift doping region in the high voltage well region and a source / drain doping region in the drift doping region. The invention can improve the breakdown voltage, increase the switching characteristics of the device, reduce the leakage current of the device, and reduce the on-resistance of the device.
Description
technical field [0001] The present invention relates to a semiconductor technology, and in particular to a high-voltage semiconductor device with a gate dielectric structure of non-uniform thickness. Background technique [0002] High-voltage semiconductor device technology is suitable for high-voltage and high-power integrated circuits. Traditional high-voltage semiconductor devices, such as double diffused drain metal oxide semiconductor transistors (Double Diffused Drain MOSFET, DDDMOS) and lateral diffused metal oxide semiconductor transistors (Lateral diffused MOSFET, LDMOS), are mainly used for components higher than or about 18V application field. The advantage of high-voltage semiconductor device technology is that it is cost-effective and easily compatible with other manufacturing processes. It has been widely used in the fields of display driver IC components, power supplies, power management, communications, automotive electronics, or industrial control. [0003...
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IPC IPC(8): H01L29/78H01L29/423H01L21/336H01L21/28
CPCH01L29/401H01L29/42368H01L29/66492H01L29/66681H01L29/7816H01L29/7833
Inventor 林志威邱柏豪林庚谕
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION