A kind of surface plasmon enhanced semiconductor active device and its manufacturing method

Abstract

The invention relates to a surface plasmon enhancement semiconductor active device and a production method thereof. The active device comprises a matrix and a multi-layer semiconductor structure formed on the matrix; and the multi-layer semiconductor structure comprises a first semiconductor layer, an active layer, a second semiconductor layer and a surface plasmon coupling layer which are sequentially formed on the matrix, and a first electrode and a second electrode which are respectively in direct or indirect electrical connection with the first semiconductor layer and the second semiconductor layer. The method comprises the steps of: producing an epitaxy structure; producing a surface plasmon layer on the surface of a multi-quantum-well layer of the second semiconductor layer; producing the second electrode on the surface plasmon layer; exposing all or part of the first semiconductor layer to use as a contact layer for producing the first electrode; producing the first electrode atthe position of the exposed electrical contact layer of the first semiconductor layer; and producing a wavelength proportion selection film layer in a non-electrode region on the surface of the firstsemiconductor layer. According to the invention, broadband spectrum or multi-spectrum radiation and non-phosphor single-chip white light radiation are implemented.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a surface plasmon enhanced semiconductor active device and a manufacturing method thereof. Background technique [0002] Semiconductor optical radiation device technology has developed rapidly in recent years, which has had a significant impact on science and technology, industry and daily life. Among them, the semiconductor optical radiation device of the III-V compound semiconductor material system is the most prominent. Typical representative materials are AlN, GaN, InN and combined ternary or quaternary compounds. The theoretical band gap ranges from 6.2eV to 0.7eV. Radiation wavelengths can cover deep ultraviolet to infrared bands. At present, the InGaN / GaN series of blue-green LEDs have set off a revolution in lighting technology. Ultraviolet and ultraviolet LEDs based on AlGaN materials play a huge role in the fields of ultraviolet curing, ultraviolet sterilizatio...

AI Technical Summary

Problems solved by technology

[0005] The present invention solves the problem of using surface plasmon technology to improve the internal quantum efficiency of semiconductor active devices, especially for the yellow-green light band and deep ultraviolet band with low luminous efficiency at present, and may be used for red light that cannot be effectively realized by using InGaN materials. and infrared bands, providing a surface plasmon-enhanced semiconductor active device and a manufacturing method thereof

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