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A kind of monocrystalline silicon-based heterojunction solar cell and its preparation method

A solar cell and heterojunction technology, applied in the field of solar cells, can solve problems such as limited effects, and achieve the effects of increasing efficiency, improving conversion efficiency, and improving short-circuit current density

Active Publication Date: 2018-10-26
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the prior art, due to the limitation of the structure of the monocrystalline silicon-based heterojunction solar cell itself, and the influence of high temperature in its preparation process, the effect of improving the performance of the cell after doping is limited, and it is still not very good. Meet actual needs

Method used

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  • A kind of monocrystalline silicon-based heterojunction solar cell and its preparation method
  • A kind of monocrystalline silicon-based heterojunction solar cell and its preparation method
  • A kind of monocrystalline silicon-based heterojunction solar cell and its preparation method

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Effect test

Embodiment 1

[0036] A method for preparing a monocrystalline silicon-based heterojunction solar cell, comprising the steps of:

[0037] The substrate after cleaning is sent into the deposition of a-Si i layer, a-Sin layer, a-Si p+ layer, a-Si p layer and ITO layer step by step in the plasma-enhanced chemical vapor deposition system; Picture 1-1 As shown, there is a single-crystal silicon-based heterojunction solar cell with a highly doped a-Si p+ layer at the a-Si p / a-Si i interface; the present invention is based on a single-crystal silicon-based heterojunction cell structure (ITO / a-Si p / a-Si i / substrate / a-Si i / a-Si n / ITO) is improved, and a layer of highly doped a-Si p+ is inserted between the a-Si p / ITO layers layer, the substrate in this embodiment uses N-type crystalline silicon, that is, c-Si(n).

[0038] Wherein, the gas source is silane.

[0039] In the obtained monocrystalline silicon-based heterojunction solar cell, the thickness of a-Si p+ layer is 5nm, the thickness of ITO i...

Embodiment 2

[0042] A method for preparing a monocrystalline silicon-based heterojunction solar cell, comprising the steps of:

[0043]The substrate after cleaning is sent into the deposition of a-Si i layer, a-Sin layer, a-Si n+ layer, a-Si p layer and ITO layer step by step in the plasma-enhanced chemical vapor deposition system; Figure 1-2 Shown, there is the monocrystalline silicon-based heterojunction solar cell of highly doped a-Si n+ layer at a-Si n / a-Si i interface; a-Si n / a-Si i / substrate / a-Si i / a-Si p / ITO) is improved, and a layer of highly doped a-Si n+ is inserted between the a-Si n / ITO layers layer, the substrate in this embodiment is p-type crystalline silicon, that is, c-Si(p).

[0044] Among them, the gas sources are silane and borane.

[0045] In the obtained monocrystalline silicon-based heterojunction solar cell, the thickness of a-Si n+ layer is 8nm, the thickness of ITO is 100nm, the thickness of a-Si n layer is 8nm, the thickness of a-Si i layer is 8nm, and the thi...

Embodiment 3

[0047] A method for preparing a monocrystalline silicon-based heterojunction solar cell, comprising the steps of:

[0048] The substrate after cleaning is sent into the plasma-enhanced chemical vapor deposition system to carry out the deposition of a-Si i layer, a-Sin layer, a-Si p+ layer, a-Si p layer and ITO layer step by step; and in a- The photoelectric enhancement material is inserted into the interface of Si p+ / a-Sip to obtain the following Figure 7 As shown, the monocrystalline silicon-based heterojunction solar energy with highly doped a-Si p+ layer at the interface of a-Si p / a-Si i and photoelectric enhancement material at the interface of a-Si p+ / a-Si p Battery. The present invention is improved on the basis of single crystal silicon-based heterojunction cell structure (ITO / a-Si p / a-Si i / substrate / a-Si i / a-Si n / ITO), in a-Si A highly doped a-Si p+ layer is inserted between p / ITO layers, and a photoelectric enhancement material is inserted in the interface of a-Si ...

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Abstract

The invention discloses a monocrystalline silicon-based heterojunction solar cell and a preparation method thereof. The cell comprises an ITO layer, an a-Si(p) layer, an a-Si(i) layer, a substrate, the a-Si(i) layer, an a-Si(n) layer and the ITO layer which are stacked in sequence, a highly-doped a-Si(p+) layer which is inserted between the ITO layer and the a-Si(p) layer, or a highly-doped a-Si(n+) layer which is inserted between the ITO layer and the a-Si(n) layer. According to the method, the a-Si(i) layers, the a-Si(n) layer and the a-Si(p) layer of the heterojunction solar cell are deposited on the substrate in plasma enhanced chemical vapor deposition equipment step by step; the highly-doped a-Si(p+) layer or the highly-doped a-Si(n+) layer is deposited in the a-Si(p) / ITO layer interface or the a-Si(n) / ITO layer interface of the cell; and an ITO electrode is deposited, thereby obtaining the silicon-based heterojunction solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a single crystal silicon-based heterojunction solar cell and a preparation method thereof. Background technique [0002] Recently, with the development of research and production technology, solar cells will play a major role in the field of traditional energy. The current market mainly includes silicon-based solar cells, multi-component compound thin-film solar cells, and organic dye-sensitized solar cells. Among them, silicon-based solar cells have become the leading product of solar cells due to their advantages in raw material reserves, maintaining a market share of more than 80%. Compared with other types of solar cells, its scientific research and production are relatively mature and stable, and its photoelectric conversion efficiency is high. In the next few years, the huge demand for photovoltaic power generation in various countries around the world will...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/076H01L31/18B82Y20/00B82Y30/00
CPCB82Y20/00B82Y30/00H01L31/035272H01L31/076H01L31/1804Y02E10/547Y02E10/548Y02P70/50
Inventor 刘生忠郭小佳
Owner SHAANXI NORMAL UNIV
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