An organic laser thin film device based on a triplet exciton amplifier and its application

A laser thin film and triplet technology, applied in the laser field, can solve the problems of large optical loss and waste, and achieve the effects of low cost, simple and fast preparation, and lowering of the pumping threshold.

Active Publication Date: 2020-05-08
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this approach also limits the contribution of triplet excitons to stimulated emission by 75%
This is wasteful and disadvantageous because electrically pumping organic semiconductor laser diodes usually requires extremely high current densities (over 1kA / cm 2 )
On the other hand, the biggest challenge for phosphorescent materials to achieve stimulated emission is the large optical loss caused by long-lived triplet excitons.

Method used

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  • An organic laser thin film device based on a triplet exciton amplifier and its application
  • An organic laser thin film device based on a triplet exciton amplifier and its application
  • An organic laser thin film device based on a triplet exciton amplifier and its application

Examples

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Effect test

Embodiment 1

[0043] Choose a transparent quartz plate as the substrate, choose the gain medium of the triplet-singlet host-guest doping system, and choose the iridium complex (Dfpypy) as the host 2 Ir(pic), the object selective fluorescent gain medium F8BT, its structural formula is:

[0044]

[0045] The mass ratio of host and guest is: 1%, 2%, 4%, 10%, 20%, 40%, 60%, 80%, 85%, 90% and 95%, and the preparation method is shown in the specific embodiment. figure 2 Shown is (Dfpypy) 2 Spectra of organic laser thin film devices with a doping mass ratio of Ir(pic) to F8BT of 1:9 at different pump energies, it can be seen that as the pump energy increases, the spectrum narrows, that is, spontaneous Amplification of radiation (ASE) phenomenon; the inset is a comparison of the half-peak width of the pure F8BT output spectrum with the pump energy. It can be seen that the spontaneous emission amplification threshold of the doped organic laser thin film device is higher than that of the pure fl...

Embodiment 2

[0047] Choose a transparent quartz plate as the substrate, choose the gain medium of the triplet-singlet host-guest doping system, and choose the iridium complex (Dfpypy) as the host 2 Ir(dpm), guest selective fluorescent gain medium F8BT. The mass ratio of host and guest is: 1%, 2%, 4%, 10%, 20%, 40%, 60%, 80%, 85%, 90% and 95%, and the preparation method is shown in the specific embodiment. Figure 4 A comparison chart showing the variation of the spontaneous emission amplification threshold of the organic laser thin film devices of Example 1 and Example 2 with the proportion of the fluorescent gain medium. It can be seen that the selection of iridium complexes (Dfpypy) 2 The spontaneous emission amplification threshold of Example 2 in which Ir(dpm) is the main body is higher than that of Example 1.

Embodiment 3

[0049] Choose the glass-based DFB grating as the substrate, choose the gain medium of the triplet-singlet host-guest doping system, and choose the iridium complex (Dfpypy) as the host 2 Ir(pic), the guest-selective fluorescent gain medium F8BT. The mass ratio of the host to the guest is 90%, and the preparation method is as shown in the detailed description. Figure 5 Shown are the laser spectrum, fluorescence spectrum and laser threshold variation graph of the organic laser thin film device under different DFB grating periods. It can be seen that the organic laser thin film device with DFB grating as the substrate has obvious laser spectral output.

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Abstract

The invention discloses an organic laser thin-film device based on a triplet-state exciton amplifier and an application of the organic laser thin-film device. The organic laser thin-film device comprises a substrate and a gain medium, wherein the gain medium is deposited on the substrate, belongs to a triplet state-singlet state host-guest doping system and contains a phosphorescence complex as the triplet-state exciton amplifier and a fluorescent organic compound as a light amplification gain medium. The organic laser thin-film device with lower threshold can be obtained by adjusting a ratioof the phosphorescence complex to the fluorescent organic compound. Meanwhile, the organic laser thin-film device based on the triplet-state exciton amplifier can be taken as a luminescent layer to beapplied to an OLED (organic light-emitting diode), the photoelectric property of the OLED can be substantially improved by means of sufficient utilization of triplet-state excitons, and the organic laser thin-film device can be applied to an electrically pumped organic laser device. A method is low in cost, the preparation is simple and fast, and the organic laser thin-film device can be appliedto the organic laser device based on a flexible substrate.

Description

technical field [0001] The invention belongs to the field of laser technology, in particular to an organic laser thin film device based on a triplet exciton amplifier and its application. Background technique [0002] Organic semiconductor materials are widely explored in various optoelectronic applications, such as organic light-emitting diodes (OLEDs), organic solar cells (OPVs), organic thin-film transistors (OTFTs), and organic semiconductor lasers (OSLs), among others. In particular, OLED technology based on light-emitting organic semiconductors has entered the market for commercial flat panel displays and solid-state lighting applications. According to the principle of spin conservation, the ratio of singlet and triplet excitons is 1:3 in the process of organic electroluminescence to generate excitons. Therefore, usually in π-conjugated organic semiconductor fluorescent materials, only the singlet excitons accounting for 25% of the total excitons can be utilized, and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/36
CPCH01S5/36
Inventor 赖文勇潘劲强江翼林赫黄维
Owner NANJING UNIV OF POSTS & TELECOMM
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